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參數(shù)資料
| 型號： | MRF577T1 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | The RF Small Signal Line NPN Silicon High-Frequency Transistor |
| 中文描述： | L BAND, Si, NPN, RF POWER TRANSISTOR, SOT-323 |
| 封裝： | SC-70, SOT-323, 3 PIN |
| 文件頁數(shù)： | 3/12頁 |
| 文件大小： | 122K |
| 代理商： | MRF577T1 |
3
MRF577T1
MOTOROLA RF DEVICE DATA
VCE = 6 V
VCE = 3 V
TYPICAL CHARACTERISTICS
Figure 2. f
τ
, Current–Gain Bandwidth Product
versus Collector Current
IC, COLLECTOR CURRENT (mA)
100
10
1
8
0
Figure 3. Collector–Base Capacitance
versus Voltage
VCB, COLLECTOR–BASE VOLTAGE (Vdc)
10
1
0
2
1.6
0.2
0
f
6
5
4
3
2
1
C
1
2
3
4
5
6
7
8
9
τ
,
7
0.4
0.6
0.8
1.2
1.4
1.8
Figure 4. Input Capacitance versus
Emitter–Base Voltage
VEB, EMITTER–BASE VOLTAGE (Vdc)
3
0
4
3
0.5
0
C
1
0.5
1
1.5
2
2.5
1.5
2.5
3.5
2
Figure 5. Maximum Power Dissipation versus
Collector Lead Temperature (TC)
TC, CASE TEMPERATURE (
°
C)
150
100
75
50
25
0
125
200
0
300
250
200
150
100
50
PD
PD(max) = 232 mW
VCE = 3 V
IC = 20 mA
GUmax
|S21|2
Figure 6. Forward Insertion Gain and
Maximum Unilateral Gain versus Frequency
f, FREQUENCY (GHz)
10
1
0.1
G
S2
(
2
,
35
30
25
20
15
10
5
0
VCE = 6 V
IC = 40 mA
GUmax
|S21|2
Figure 7. Forward Insertion Gain and
Maximum Unilateral Gain versus Frequency
f, FREQUENCY (GHz)
10
1
0.1
G
S2
(
2
,
35
30
25
20
15
10
5
0
2
3
5
20
30
50
0.3
0.5
2
3
5
0.3
0.5
2
3
5
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
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