參數(shù)資料
型號(hào)： MRF577T1
廠商： MOTOROLA INC
元件分類： 功率晶體管
英文描述： The RF Small Signal Line NPN Silicon High-Frequency Transistor
中文描述： L BAND, Si, NPN, RF POWER TRANSISTOR, SOT-323
封裝： SC-70, SOT-323, 3 PIN
文件頁數(shù)： 2/12頁
文件大?。?/td> 122K
代理商： MRF577T1
MRF577T1
2
MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS
(TC = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 1.0 mA, IB = 0 mA)
V(BR)CEO
10
12
—
Vdc
Collector–Base Breakdown Voltage
(IC = 0.1 mA, IE = 0)
V(BR)CBO
20
—
—
Vdc
Emitter–Base Breakdown Voltage
(IE = 50
μ
A, IC = 0)
V(BR)EBO
2.5
—
—
Vdc
Collector Cutoff Current
(VCB = 8.0 Vdc, IE = 0)
ICBO
—
—
10
μ
A
ON CHARACTERISTICS
DC Current Gain
(VCE = 10 Vdc, IC = 30 mA)
hFE
50
—
300
—
DYNAMIC CHARACTERISTICS
Collector–Base Capacitance
(VCB = 6.0 Vdc, IE = 0, f = 1.0 MHz)
Ccb
—
0.85
—
pF
Current–Gain Bandwidth Product
(VCE = 6.0 Vdc, IE = 40 mA, f = 1.0 GHz)
f
τ
—
7.0
—
GHz
PERFORMANCE CHARACTERISTICS
Noise Figure — Minimum
(VCE = 6.0 Vdc, IC = 5.0 mA) Figure 1
500 MHz
1.0 GHz
NFmin
—
—
1.0
1.5
—
—
dB
Associated Gain at Minimum Noise Figure
(VCE = 6.0 Vdc, IC = 5.0 mA) Figure 1
500 MHz
1.0 GHz
GNF
—
—
15
10
—
—
dB
Maximum Unilateral Gain
(VCE = 6.0 Vdc, IC = 40 mA, f = 1000 MHz)
GUmax
—
12
—
dB
Insertion Gain
(VCE = 6.0 Vdc, IC = 40 mA, f = 1000 MHz)
|S212|
—
11
—
dB
Noise Resistance
(VCE = 6.0 Vdc, IC = 5.0 mA, f = 1000 MHz)
RN
—
6.0
—
Ohms
Figure 1. Functional Circuit Schematic
VBE
VCE
DUT
RF INPUT
RF OUTPUT
**SLUG TUNER
**SLUG TUNER
*BIAS
NETWORK
*BIAS
NETWORK
*HP11590B
**MICROLAB/FXR
**
SF – 11N < 1 GHz
**
SF – 31IN
≥
1 GHz
相關(guān)PDF資料
PDF描述
MRF5811LT1 LOW NOISE HIGH-FREQUENCY TRANSISTOR NPN SILICON
MRF5S19090LR3 1990 MHz, 18 W AVG 2 x N-CDMA, 28 V LATERAL N-CHANNEL RF POWER MOSFETs
MRF5S19090LSR3 1990 MHz, 18 W AVG 2 x N-CDMA, 28 V LATERAL N-CHANNEL RF POWER MOSFETs
MRF5S21130 The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFETs
MRF5S21130R3 The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFETs
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MRF581 功能描述:射頻放大器 RF Transistor RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點(diǎn):37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測(cè)試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel
MRF581_08 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
MRF5811LT1 制造商:Motorola Inc 功能描述:UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, SOT-143
MRF5812 功能描述:射頻放大器 RF Bipolar Trans RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點(diǎn):37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測(cè)試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel
MRF5812G 制造商:Microsemi Corporation 功能描述:MRF5812G - Bulk 制造商:Microsemi Corporation 功能描述:RF SMALL SIGNAL TRANSISTOR BIPOLAR/HBT
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購

我的聯(lián)系方式

*
*
*