參數(shù)資料
型號(hào)： MRF377R3
廠商： Motorola, Inc.
英文描述： Pressure Transducer, Series 19 mm, Uncompensated, Pressure Range: 0 psi to 10 psi, Gage, flush mount, 10 Vdc excitation
中文描述： 射頻功率場(chǎng)效應(yīng)晶體管
文件頁(yè)數(shù)： 2/16頁(yè)
文件大?。?/td> 780K
代理商： MRF377R3
2
RF Device Data
Freescale Semiconductor
MRF377HR3 MRF377HR5
Table 3. ESD Protection Characteristics
Test Conditions
Class
Human Body Model
1 (Minimum)
Machine Model
M3 (Minimum)
Charge Device Model
7 (Minimum)
Table 4. Electrical Characteristics
(T
C
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
(1)
Drain-Source Breakdown Voltage
(V
GS
= 0 Vdc, I
D
=10
μ
A)
V
(BR)DSS
65
—
—
Vdc
Zero Gate Voltage Drain Current
(V
DS
= 32 Vdc, V
GS
= 0 Vdc)
I
DSS
—
—
1
μ
Adc
Gate-Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
I
GSS
—
—
1
μ
Adc
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 200
μ
A)
V
GS(th)
—
2.8
—
Vdc
On Characteristics
(1)
Gate Quiescent Voltage
(V
DS
= 32 Vdc, I
D
= 225 mA)
V
GS(Q)
—
3.5
—
Vdc
Drain-Source On-Voltage
(V
GS
= 10 Vdc, I
D
= 3 A)
V
DS(on)
—
0.27
—
Vdc
Dynamic Characteristics
(1)
Reverse Transfer Capacitance
(V
DS
= 28 Vdc, V
GS
= 0, f = 1 MHz)
C
rss
—
3.2
—
pF
Functional Characteristics
(In DVBT OFDM Single-Channel, Narrowband Fixture,
50 ohm system)
(2)
Common Source Power Gain
(V
DD
= 32 Vdc, P
out
= 45 W Avg., I
DQ
= 2 x 1000 mA,
f = 860 MHz)
G
ps
16.5
18.2
—
dB
Drain Efficiency
(V
DD
= 32 Vdc, P
out
= 45 W Avg., I
DQ
= 2 x 1000 mA,
f = 860 MHz)
η
21
22.9
—
%
Adjacent Channel Power Ratio
(V
DD
= 32 Vdc, P
out
= 45 W Avg., I
DQ
= 2 x 1000 mA,
f = 860 MHz)
ACPR
—
-59.2
-57
dBc
Typical Characteristics
(In DVBT OFDM Single-Channel, Broadband Fixture,
50 ohm system)
(2)
Common Source Power Gain
(V
DD
= 32 Vdc, P
out
= 45 W Avg., I
DQ
= 2 x 1000 mA)
f = 470 MHz
f = 560 MHz
f = 660 MHz
f = 760 MHz
f = 860 MHz
G
ps
—
—
—
—
—
17.6
17.6
17.4
17.4
16.8
—
—
—
—
—
dB
1. Each side of device measured separately.
2. Measured in push-pull configuration.
(continued)
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MRF377R5 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:RF POWER FIELD EFFECT TRANSISTOR
MRF3866 功能描述:射頻雙極小信號(hào)晶體管 RF Transistor RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel
MRF3866G 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
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