參數(shù)資料
型號(hào): MRF377R3
廠商: Motorola, Inc.
英文描述: Pressure Transducer, Series 19 mm, Uncompensated, Pressure Range: 0 psi to 10 psi, Gage, flush mount, 10 Vdc excitation
中文描述: 射頻功率場效應(yīng)晶體管
文件頁數(shù): 11/16頁
文件大?。?/td> 780K
代理商: MRF377R3
MRF377HR3 MRF377HR5
11
RF Device Data
Freescale Semiconductor
6.57 - j4.03
660
Figure 19. 470—860 MHz Broadband Series Equivalent Source and Load Impedance
f
MHz
Z
source
Z
load
470
560
5.79 - j2.40
6.63 - j2.63
6.21 - j1.69
5.66 - j1.12
6.76 - j1.00
Optimized for V
DD
= 32 V, I
DQ
= 2 x 1000 mA, P
out
= 45 W Avg., DVBT OFDM
Z
source
=
Test circuit impedance as measured from
gate to gate, balanced configuration.
Z
load
=
Test circuit impedance as measured
from drain to drain, balanced configuration.
Zsource
Zload
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
+
+
Z
o
= 10
f = 470 MHz
f = 860 MHz
f = 860 MHz
f = 470 MHz
Z
load
Z
source
760
860
5.34 - j6.28
6.67 - j4.55
6.57 - j1.91
7.37 - j5.45
Z
o
= 10
相關(guān)PDF資料
PDF描述
MRF377HR5 N-Channel Enhancement-Mode Lateral MOSFETs
MRF421 TRI GASKET FLG 24 BULK/100
MRF421 RF POWER TRANSISTORS NPN SILICON
MRF422 The RF Line NPN Silicon RF Power Transistor
MRF422 RF POWER TRANSISTORS NPN SILICON
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MRF377R5 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:RF POWER FIELD EFFECT TRANSISTOR
MRF3866 功能描述:射頻雙極小信號(hào)晶體管 RF Transistor RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel
MRF3866G 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
MRF3866R1 制造商:Microsemi Corporation 功能描述:RF POWER TRANSISTOR BIPOLAR/HBT
MRF3866R2 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS