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參數(shù)資料
| 型號(hào)： | MRF373 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| 中文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | CASE 360B-04, 3 PIN |
| 文件頁數(shù)： | 2/12頁 |
| 文件大?。?/td> | 250K |
| 代理商： | MRF373 |
MRF373 MRF373S
2
MOTOROLA WIRELESS SEMICONDUCTOR
SOLUTIONS – RF AND IF DEVICE DATA
ELECTRICAL CHARACTERISTICS
(TC = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(VGS = 0, ID =1
μ
A)
V(BR)DSS
65
–
–
Vdc
Zero Gate Voltage Drain Current
(VDS = 28 V, VGS = 0)
IDSS
–
–
1
μ
Adc
Gate–Source Leakage Current
(VGS = 20 V, VDS = 0)
IGSS
–
–
1
μ
Adc
ON CHARACTERISTICS
Gate Threshold Voltage
(VDS = 10 V, ID = 200
μ
A)
VGS(th)
2
3
4
Vdc
Gate Quiescent Voltage
(VDS = 28 V, ID = 100 mA)
VGS(Q)
3
4
5
Vdc
Drain–Source On–Voltage
(VGS = 10 V, ID = 3 A)
VDS(on)
–
0.6
0.8
Vdc
Forward Transconductance
(VDS = 10 V, ID = 3 A)
gfs
2.2
2.9
–
S
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 28 V, VGS = 0, f = 1 MHz)
Ciss
–
79
–
pF
Output Capacitance
(VDS = 28 V, VGS = 0, f = 1 MHz)
Coss
–
46
–
pF
Reverse Transfer Capacitance
(VDS = 28 V, VGS = 0, f = 1 MHz)
Crss
–
4
–
pF
FUNCTIONAL CHARACTERISTICS,
CW Operation
Common Source Power Gain
(VDD = 28 V, Pout = 60 W, IDQ = 200 mA, f = 860 MHz)
Gps
13
14.7
–
dB
Drain Efficiency
(VDD = 28 V, Pout = 60 W, IDQ = 200 mA, f = 860 MHz)
η
50
54
–
%
Load Mismatch
(VDD = 28 V, Pout = 60 W, IDQ = 200 mA, f = 860 MHz,
Load VSWR at 5:1 at All Phase Angles)
ψ
No Degradation in Output Power
TYPICAL CHARACTERISTICS,
2 Tone Operation, Push Pull Configuration (MRF373S), Broadband Fixture
Common Source Power Gain
(VDD = 28 Vdc, Pout = 100 W PEP, IDQ = 400 mA,
f1 = 860.0 MHz, f2 = 866 MHz)
Gps
–
11.2
–
dB
Drain Efficiency
(VDD = 28 Vdc, Pout = 100 W PEP, IDQ = 400 mA,
f1 = 860.0 MHz, f2 = 866 MHz)
η
–
40
–
%
Third Order Intermodulation Distortion
(VDD = 28 Vdc, Pout = 100 W PEP, IDQ = 400 mA,
f1 = 860.0 MHz, f2 = 866 MHz)
IMD
–
–30
–
dBc
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF373A | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:RF Power Field Effect Transistors |
| MRF373AL | 制造商:Freescale Semiconductor 功能描述:TRANS MOSFET N-CH 70V 3-PIN NI-360 - Bulk |
| MRF373ALR1 | 功能描述:射頻MOSFET電源晶體管 75W 860MHZ LDMOS NI360L RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF373ALR1_08 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors |
| MRF373ALR5 | 功能描述:射頻MOSFET電源晶體管 75W 860MHZ LDMOS NI360L RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
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