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參數(shù)資料
| 型號(hào)： | MRF6414 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | NPN Silicon RF Power Transistor(NPN硅射頻功率晶體管) |
| 中文描述： | UHF BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | CASE 333A-02, 6 PIN |
| 文件頁數(shù)： | 1/6頁 |
| 文件大小： | 140K |
| 代理商： | MRF6414 |
1
MRF6414
MOTOROLA RF DEVICE DATA
Motorola, Inc. 1998
The RF Line
The MRF6414 is designed for 26 volt UHF large signal, common emitter,
class AB linear amplifier applications.
Specified 26 Volt, 960 MHz Characteristics
Output Power = 50 Watts
Minimum Gain = 8.5 dB @ 960 MHz, Class AB
Minimum Efficiency = 50% @ 960 MHz, 50 Watts
Silicon Nitride Passivated
Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal
Migration
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCEO
VCBO
VEBO
IC
PD
28
Vdc
Collector–Base Voltage
65
Vdc
Emitter–Base Voltage
4
Vdc
Collector–Current — Continuous
6
Adc
Total Device Dissipation @ TC = 25
°
C
Derate above 25
°
C
134
0.77
Watts
W/
°
C
Storage Temperature Range
Tstg
–65 to +150
°
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
θ
JC
1.3
°
C/W
ELECTRICAL CHARACTERISTICS
(TC = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (IC = 20 mAdc, IB = 0)
Collector–Base Breakdown Voltage (IC = 20 mAdc, IE = 0)
Emitter–Base Breakdown Voltage (IE = 10 mAdc, IC = 0)
Collector–Emitter Leakage Current (VCE = 30 Vdc, RBE = 75
)
ON CHARACTERISTICS
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICER
28
—
—
Vdc
65
—
—
Vdc
4
—
—
Vdc
—
—
10
mAdc
DC Current Gain (ICE = 1 Adc, VCE = 5 Vdc)
hFE
30
—
120
—
Order this document
by MRF6414/D
SEMICONDUCTOR TECHNICAL DATA
50 W, 960 MHz
RF POWER TRANSISTOR
NPN SILICON
CASE 333A–02, STYLE 2
REV 1
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相關(guān)代理商/技術(shù)參數(shù) |
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| MRF6414PHT | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:NPN Silicon RF Power Transistor |
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