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參數(shù)資料
| 型號(hào)： | MRF282ZR1 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | RF MOSFET(射頻MOS場(chǎng)效應(yīng)管) |
| 中文描述： | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | NI-200Z, CASE 458C-03, 2 PIN |
| 文件頁數(shù)： | 2/12頁 |
| 文件大?。?/td> | 201K |
| 代理商： | MRF282ZR1 |
MRF282SR1 MRF282ZR1
2
MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS continued
(TC = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 50
μ
Adc)
VGS(th)
2.0
3.0
4.0
Vdc
Drain–Source On–Voltage
(VGS = 10 Vdc, ID = 0.5 Adc)
VDS(on)
—
0.4
0.6
Vdc
Gate Quiescent Voltage
(VDS = 26 Vdc, ID = 75 mAdc)
VGS(q)
3.0
4.0
5.0
Vdc
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 26 Vdc, VGS = 0, f = 1.0 MHz)
Ciss
—
15
—
pF
Output Capacitance
(VDS = 26 Vdc, VGS = 0, f = 1.0 MHz)
Coss
—
8.0
—
pF
Reverse Transfer Capacitance
(VDS = 26 Vdc, VGS = 0, f = 1.0 MHz)
Crss
—
0.45
—
pF
FUNCTIONAL TESTS
(In Motorola Test Fixture)
Common–Source Power Gain
(VDD = 26 Vdc, Pout = 10 W PEP, IDQ = 75 mA,
f1 = 2000.0 MHz, f2 = 2000.1 MHz)
Gps
10.5
11.5
—
dB
Drain Efficiency
(VDD = 26 Vdc, Pout = 10 W PEP, IDQ = 75 mA,
f1 = 2000.0 MHz, f2 = 2000.1 MHz)
η
28
—
—
%
Intermodulation Distortion
(VDD = 26 Vdc, Pout = 10 W PEP, IDQ = 75 mA,
f1 = 2000.0 MHz, f2 = 2000.1 MHz)
IMD
—
–31
–28
dBc
Input Return Loss
(VDD = 26 Vdc, Pout = 10 W PEP, IDQ = 75 mA,
f1 = 2000.0 MHz, f2 = 2000.1 MHz)
IRL
9
14
—
dB
Common–Source Power Gain
(VDD = 26 Vdc, Pout = 10 W PEP, IDQ = 75 mA,
f1 = 1930.0 MHz, f2 = 1930.1 MHz)
Gps
10.5
11.5
—
dB
Drain Efficiency
(VDD = 26 Vdc, Pout = 10 W PEP, IDQ = 75 mA,
f1 = 1930.0 MHz, f2 = 1930.1 MHz)
η
28
—
—
%
Intermodulation Distortion
(VDD = 26 Vdc, Pout = 10 W PEP, IDQ = 75 mA,
f1 = 1930.0 MHz, f2 = 1930.1 MHz)
IMD
—
–31
–28
dBc
Input Return Loss
(VDD = 26 Vdc, Pout = 10 W PEP, IDQ = 75 mA,
f1 = 1930.0 MHz, f2 = 1930.1 MHz)
IRL
9
14
—
dB
Common–Source Power Gain
(VDD = 26 Vdc, Pout = 10 W CW, IDQ = 75 mA, f = 2000.0 MHz)
Gps
9.5
11.5
—
dB
Drain Efficiency
(VDD = 26 Vdc, Pout = 10 W CW, IDQ = 75 mA, f = 2000.0 MHz)
η
35
40
—
%
Output Mismatch Stress
(VDD = 26 Vdc, Pout = 10 W CW, IDQ = 75 mA,
f1 = 2000.0 MHz, f2 = 2000.1 MHz, Load VSWR = 10:1,
All Phase Angles at Frequency of Test)
Ψ
No Degradation In Output Power
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