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參數(shù)資料
| 型號(hào)： | MRF2947 |
| 廠商： | Motorola, Inc. |
| 英文描述： | LOW NOISE TRANSISTORS |
| 中文描述： | 低噪音晶體管 |
| 文件頁(yè)數(shù)： | 1/12頁(yè) |
| 文件大?。?/td> | 181K |
| 代理商： | MRF2947 |
1
MRF2947AT1,T2 MRF2947RAT1,T2
MOTOROLA RF DEVICE DATA
Motorola, Inc. 1997
The RF Line
Motorola’s MRF2947 device contains two high performance, low–noise NPN
silicon bipolar transistors. This device has two 941 die housed in the high
performance six leaded SC–70ML package; yielding a 9 GHz current
gain–bandwidth product.
The RF performance at levels of 1 volt and 1 mA makes the MRF2947 well
suited for low–voltage, low–current, front–end applications such as paging,
cellular, GSM, DECT, CT2 and other portable wireless systems. The MRF2947
is fully ion–implanted with gold metallization and nitride passivation for
maximum device reliability, performance and uniformity.
Low Noise Figure, NF = 1.5 dB (Typ) @ 1 GHz @ 5 mA
High Current Gain–Bandwidth Product, ft = 9 GHz (Typ) @ 6 Volts, 15 mA
Maximum Stable Gain, 18 dB @ 1 GHz @ 5 mA
Output Third Order Intercept, OIP3 = +27 dBm
Available in Tape and Reel Packaging Options:
T1 Suffix = 3,000 Units per 8 mm, 7 inch Reel
T2 Suffix = 3,000 Units per 8 mm, 7 inch Reel (reverse device
orientation in tape)
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCEO
VCBO
VEBO
PDmax
10
Vdc
Collector–Base Voltage
20
Vdc
Emitter–Base Voltage
1.5
Vdc
Power Dissipation (1) TC = 75
°
C
Derate linearly above TC = 75
°
C @
0.188
2.5
Watts
mW/
°
C
Collector Current — Continuous (2)
IC
50
mA
Maximum Junction Temperature
TJmax
Tstg
R
θ
JC
150
°
C
Storage Temperature
–55 to +150
°
C
Thermal Resistance, Junction to Case
400
°
C/W
DEVICE MARKINGS
MRF2947AT1,T2 = WU
MRF2947RAT1,T2 = XR
(1) To calculate the junction temperature use TJ = PD x R
θ
JC + TC. The case temperature is measured on collector lead adjacent to the package
body.
(2) IC — Continuous (MTBF > 10 years).
Order this document
by MRF2947/D
SEMICONDUCTOR TECHNICAL DATA
ICmax = 50 mA
LOW NOISE
TRANSISTORS
CASE 419B–01, STYLES 16 & 17
SC–70ML/SOT–363
B1
C1
E1
B2
E2
C2
STYLE 16
B1
C1
E2
B2
E1
C2
STYLE 17
MRF2947AT1,T2
MRF2947RAT1,T2
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MRF2947AT1 | LOW NOISE TRANSISTORS |
| MRF2947AT2 | LOW NOISE TRANSISTORS |
| MRF2947RAT1 | LOW NOISE TRANSISTORS |
| MRF2947RAT2 | LOW NOISE TRANSISTORS |
| MRF3010 | LATERAL N-CHANNEL BROADBAND RF POWER MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF2947AT1 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:LOW NOISE TRANSISTORS |
| MRF2947AT2 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:LOW NOISE TRANSISTORS |
| MRF2947RAT1 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:LOW NOISE TRANSISTORS |
| MRF2947RAT2 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:LOW NOISE TRANSISTORS |
| MRF2A(AMMO) | 制造商:Bel Fuse 功能描述:FUSE |
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