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參數(shù)資料
| 型號(hào)： | MRF282ZR1 |
| 廠商： | MOTOROLA INC |
| 元件分類(lèi)： | 功率晶體管 |
| 英文描述： | RF MOSFET(射頻MOS場(chǎng)效應(yīng)管) |
| 中文描述： | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | NI-200Z, CASE 458C-03, 2 PIN |
| 文件頁(yè)數(shù)： | 1/12頁(yè) |
| 文件大小： | 201K |
| 代理商： | MRF282ZR1 |
1
MRF282SR1 MRF282ZR1
MOTOROLA RF DEVICE DATA
Motorola, Inc. 2000
The RF Sub–Micron MOSFET Line
N–Channel Enhancement–Mode Lateral MOSFETs
Designed for class A and class AB PCN and PCS base station applications at
frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier
amplifier applications.
Specified Two–Tone Performance @ 2000 MHz, 26 Volts
Output Power = 10 Watts PEP
Power Gain = 10.5 dB
Efficiency = 28%
Intermodulation Distortion = –31 dBc
Specified Single–Tone Performance @ 2000 MHz, 26 Volts
Output Power = 10 Watts CW
Power Gain = 9.5 dB
Efficiency = 35%
Capable of Handling 10:1 VSWR, @ 26 Vdc,
2000 MHz, 10 Watts CW Output Power
Excellent Thermal Stability
Characterized with Series Equivalent Large–Signal
Impedance Parameters
S–Parameter Characterization at High Bias Levels
Available in Tape and Reel. R1 Suffix = 500 Units per 12 mm, 7 inch Reel.
LDMOS Models Available at
http://www.motorola.com/semiconductors/rf/models/
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain–Source Voltage
VDSS
VGS
PD
65
Vdc
Gate–Source Voltage
±
20
Vdc
Total Device Dissipation @ TC = 25
°
C
Derate above 25
°
C
60
0.34
Watts
W/
°
C
Storage Temperature Range
Tstg
TJ
–65 to +150
°
C
Operating Junction Temperature
200
°
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
θ
JC
4.2
°
C/W
ELECTRICAL CHARACTERISTICS
(TC = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(VGS = 0, ID = 10
μ
Adc)
V(BR)DSS
65
—
—
Vdc
Zero Gate Voltage Drain Current
(VDS = 28 Vdc, VGS = 0)
IDSS
—
—
1.0
μ
Adc
Gate–Source Leakage Current
(VGS = 20 Vdc, VDS = 0)
IGSS
—
—
1.0
μ
Adc
NOTE –
CAUTION
– MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Order this document
by MRF282/D
SEMICONDUCTOR TECHNICAL DATA
2000 MHz, 10 W, 26 V
LATERAL N–CHANNEL
BROADBAND
RF POWER MOSFETs
CASE 458B–02, STYLE 1
(MRF282SR1)
CASE 458C–02, STYLE 1
(MRF282ZR1)
REV 9
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