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參數(shù)資料
| 型號： | MRF282SR1 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | RF MOSFET(射頻MOS場效應(yīng)管) |
| 中文描述： | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | NI-200S, CASE 458B-03, 2 PIN |
| 文件頁數(shù)： | 1/12頁 |
| 文件大小： | 201K |
| 代理商： | MRF282SR1 |
1
MRF282SR1 MRF282ZR1
MOTOROLA RF DEVICE DATA
Motorola, Inc. 2000
The RF Sub–Micron MOSFET Line
N–Channel Enhancement–Mode Lateral MOSFETs
Designed for class A and class AB PCN and PCS base station applications at
frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier
amplifier applications.
Specified Two–Tone Performance @ 2000 MHz, 26 Volts
Output Power = 10 Watts PEP
Power Gain = 10.5 dB
Efficiency = 28%
Intermodulation Distortion = –31 dBc
Specified Single–Tone Performance @ 2000 MHz, 26 Volts
Output Power = 10 Watts CW
Power Gain = 9.5 dB
Efficiency = 35%
Capable of Handling 10:1 VSWR, @ 26 Vdc,
2000 MHz, 10 Watts CW Output Power
Excellent Thermal Stability
Characterized with Series Equivalent Large–Signal
Impedance Parameters
S–Parameter Characterization at High Bias Levels
Available in Tape and Reel. R1 Suffix = 500 Units per 12 mm, 7 inch Reel.
LDMOS Models Available at
http://www.motorola.com/semiconductors/rf/models/
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain–Source Voltage
VDSS
VGS
PD
65
Vdc
Gate–Source Voltage
±
20
Vdc
Total Device Dissipation @ TC = 25
°
C
Derate above 25
°
C
60
0.34
Watts
W/
°
C
Storage Temperature Range
Tstg
TJ
–65 to +150
°
C
Operating Junction Temperature
200
°
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
θ
JC
4.2
°
C/W
ELECTRICAL CHARACTERISTICS
(TC = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(VGS = 0, ID = 10
μ
Adc)
V(BR)DSS
65
—
—
Vdc
Zero Gate Voltage Drain Current
(VDS = 28 Vdc, VGS = 0)
IDSS
—
—
1.0
μ
Adc
Gate–Source Leakage Current
(VGS = 20 Vdc, VDS = 0)
IGSS
—
—
1.0
μ
Adc
NOTE –
CAUTION
– MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Order this document
by MRF282/D
SEMICONDUCTOR TECHNICAL DATA
2000 MHz, 10 W, 26 V
LATERAL N–CHANNEL
BROADBAND
RF POWER MOSFETs
CASE 458B–02, STYLE 1
(MRF282SR1)
CASE 458C–02, STYLE 1
(MRF282ZR1)
REV 9
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF282Z | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs |
| MRF282ZR1 | 功能描述:射頻MOSFET電源晶體管 RF PWR FET SOE PKG RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF284 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors |
| MRF284C | 制造商:Motorola Inc 功能描述:284C |
| MRF284LR1 | 制造商:Freescale Semiconductor 功能描述: |
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