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參數(shù)資料
| 型號： | MRF281ZR1 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | RF POWER FIELD EFFECT TRANSISTORS |
| 中文描述： | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | NI-200Z, CASE 458C-03, 2 PIN |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 311K |
| 代理商： | MRF281ZR1 |
MRF281SR1 MRF281ZR1
2
MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS continued
(T
C
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 20
μ
Adc)
V
GS(th)
2.4
3.2
4
Vdc
Gate Quiescent Voltage
(V
DS
= 26 Vdc, I
D
= 25 mAdc)
V
GS(q)
3
4.1
5
Vdc
Drain
–
Source On
–
Voltage
(V
GS
= 10 Vdc, I
D
= 0.1 A)
V
DS(on)
0.18
0.24
0.30
Vdc
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
DS
= 26 Vdc, V
GS
= 0, f = 1.0 MHz)
C
iss
—
5.5
—
pF
Output Capacitance
(V
DS
= 26 Vdc, V
GS
= 0, f = 1.0 MHz)
C
oss
—
3.3
—
pF
Reverse Transfer Capacitance
(V
DS
= 26 Vdc, V
GS
= 0, f = 1.0 MHz)
C
rss
—
0.17
—
pF
FUNCTIONAL TESTS
(In Motorola Test Fixture)
Common
–
Source Amplifier Power Gain
(V
DD
= 26 Vdc, P
out
= 4 W PEP, I
DQ
= 25 mA,
f1 = 2000.0 MHz, f2 = 2000.1 MHz)
G
ps
11
12.5
—
dB
Drain Efficiency
(V
DD
= 26 Vdc, P
out
= 4 W PEP, I
DQ
= 25 mA,
f1 = 2000.0 MHz, f2 = 2000.1 MHz)
η
30
33
—
%
Input Return Loss
(V
DD
= 26 Vdc, P
out
= 4 W PEP, I
DQ
= 25 mA,
f1 = 2000.0 MHz, f2 = 2000.1 MHz)
IRL
—
–
16
–
10
dB
Intermodulation Distortion
(V
DD
= 26 Vdc, P
out
= 4 W PEP, I
DQ
= 25 mA,
f1 = 2000.0 MHz, f2 = 2000.1 MHz)
IMD
—
–
31
–
29
dBc
Common
–
Source Amplifier Power Gain
(V
DD
= 26 Vdc, P
out
= 4 W PEP, I
DQ
= 25 mA,
f1 = 1930.0 MHz, f2 = 1930.1 MHz)
G
ps
11
12.5
—
dB
Drain Efficiency
(V
DD
= 26 Vdc, P
out
= 4 W, I
DQ
= 25 mA,
f1 = 1930.0 MHz, f2 = 1930.1 MHz)
η
30
—
—
%
Input Return Loss
(V
DD
= 26 Vdc, P
out
= 4 W PEP, I
DQ
= 25 mA,
f1 = 1930.0 MHz, f2 = 1930.1 MHz)
IRL
—
–
16
–
10
dB
Intermodulation Distortion
(V
DD
= 26 Vdc, P
out
= 4 W PEP, I
DQ
= 25 mA,
f1 = 1930.0 MHz, f2 = 1930.1 MHz)
IMD
—
–
31
—
dBc
Common
–
Source Amplifier Power Gain
(V
DD
= 26 Vdc, P
out
= 4 W CW, I
DQ
= 25 mA,
f1 = 2000.0 MHz)
G
ps
10.5
12
—
dB
Drain Efficiency
(V
DD
= 26 Vdc, P
out
= 4 W CW, I
DQ
= 25 mA,
f1 = 2000.0 MHz)
η
40
44
—
%
Output Mismatch Stress
(V
DD
= 26 Vdc, P
out
= 4 W CW, I
DQ
= 25 mA,
f1 = 2000.0 MHz, VSWR = 10:1,
All Phase Angles at Frequency of Test)
Ψ
No Degradation In Output Power
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