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參數(shù)資料
| 型號： | MRF9030 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | RF POWER FIELD EFFECT TRANSISTORS |
| 中文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | CASE 360B-05, 3 PIN |
| 文件頁數(shù)： | 1/12頁 |
| 文件大?。?/td> | 404K |
| 代理商： | MRF9030 |
1
MRF9030R1 MRF9030SR1
Motorola, Inc. 2002
The RF Sub–Micron MOSFET Line
N–Channel Enhancement–Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with frequen-
cies up to 1.0 GHz. The high gain and broadband performance of these devices
make them ideal for large–signal, common–source amplifier applications in
26 volt base station equipment.
Typical Two–Tone Performance at 945 MHz, 26 Volts
Output Power — 30 Watts PEP
Power Gain — 19 dB
Efficiency — 41.5%
IMD — –32.5 dBc
Integrated ESD Protection
Designed for Maximum Gain and Insertion Phase Flatness
Capable of Handling 10:1 VSWR, @ 26 Vdc, 945 MHz, 30 Watts CW
Output Power
Excellent Thermal Stability
Characterized with Series Equivalent Large–Signal Impedance Parameters
In Tape and Reel. R1 Suffix = 500 Units per 32 mm, 13 inch Reel.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain–Source Voltage
V
DSS
68
Vdc
Gate–Source Voltage
V
GS
–0.5, +15
Vdc
Total Device Dissipation @ T
C
= 25
°
C
Derate above 25
°
C
MRF9030R1
P
D
92
0.53
Watts
W/
°
C
Total Device Dissipation @ T
C
= 25
°
C
Derate above 25
°
C
MRF9030SR1
P
D
117
0.67
Watts
W/
°
C
Storage Temperature Range
T
stg
–65 to +200
°
C
Operating Junction Temperature
T
J
200
°
C
ESD PROTECTION CHARACTERISTICS
Test Conditions
Class
Human Body Model
1 (Minimum)
Machine Model
M1 (Minimum)
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
MRF9030R1
MRF9030SR1
R
θ
JC
1.9
1.5
°
C/W
NOTE –
CAUTION
– MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Order this document
by MRF9030/D
SEMICONDUCTOR TECHNICAL DATA
945 MHz, 30 W, 26 V
LATERAL N–CHANNEL
BROADBAND
RF POWER MOSFETs
CASE 360B–05, STYLE 1
NI–360
MRF9030R1
CASE 360C–05, STYLE 1
NI–360S
MRF9030SR1
REV 2
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PDF描述 |
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| MRF9030R1 | RF POWER FIELD EFFECT TRANSISTORS |
| MRF9030SR1 | RF POWER FIELD EFFECT TRANSISTORS |
| MRF9045MBR1 | RF POWER FIELD EFFECT TRANSISTORS |
| MRF9045 | RF POWER FIELD EFFECT TRANSISTORS |
| MRF9045MR1 | LEAD FREE 50V 3PHS BRUSHLESS DC MTR CTLR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF9030_08 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET |
| MRF9030D | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:The RF Sub-Micron MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF9030GMR1 | 制造商:Rochester Electronics LLC 功能描述: 制造商:Freescale Semiconductor 功能描述: |
| MRF9030GNR1 | 功能描述:射頻MOSFET電源晶體管 30W RF PWR FET RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF9030LR1 | 功能描述:射頻MOSFET電源晶體管 30W RF PWR FET NI-360L RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
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