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參數(shù)資料
| 型號(hào)： | MRF19085LR3 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, NI-780, CASE 465-06, 2 PIN |
| 文件頁數(shù)： | 5/12頁 |
| 文件大小： | 403K |
| 代理商： | MRF19085LR3 |
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RF Device Data
Freescale Semiconductor
MRF19085LR3 MRF19085LSR3
Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Drain-Source Breakdown Voltage
(VGS = 0 Vdc, ID = 100 μAdc)
V(BR)DSS
65
—
Vdc
Zero Gate Voltage Drain Current
(VDS = 26 Vdc, VGS = 0 Vdc)
IDSS
—
10
μAdc
Gate-Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
1
μAdc
On Characteristics (DC)
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 200 μAdc)
VGS(th)
2
—
4
Vdc
Gate Quiescent Voltage
(VDS = 26 Vdc, ID = 850 mAdc)
VGS(Q)
2.5
3.5
4.5
Vdc
Drain-Source On-Voltage
(VGS = 10 Vdc, ID = 2 Adc)
VDS(on)
—
0.18
0.210
Vdc
Forward Transconductance
(VDS = 10 Vdc, ID = 2 Adc)
gfs
—
6
—
S
Dynamic Characteristics
Reverse Transfer Capacitance (1)
(VDS = 26 Vdc, VGS = 0, f = 1.0 MHz)
Crss
—
3.6
—
pF
Functional Tests (In Freescale Test Fixture, 50 ohm system) 2-Carrier N-CDMA, 1.2288 MHz Channel Bandwidth Carriers.
Peak/Avg. = 9.8 dB @ 0.01% Probability on CCDF.
Common-Source Amplifier Power Gain
(VDD = 26 Vdc, Pout = 18 W Avg., IDQ = 850 mA, f1 = 1930 MHz,
f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 =1990 MHz)
Gps
12
13
—
dB
Drain Efficiency
(VDD = 26 Vdc, Pout = 18 W Avg., IDQ = 850 mA, f1 = 1930 MHz,
f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 =1990 MHz)
η
21
23
—
%
3rd Order Intermodulation Distortion
(VDD = 26 Vdc, Pout = 18 W Avg., IDQ = 850 mA, f1 = 1930 MHz,
f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 =1990 MHz); IM3 measured
over 1.2288 MHz bandwidth @ f1 -2.5 MHz and f2 = +2.5 MHz)
IMD
—
-36.5
-35
dBc
Adjacent Channel Power Ratio
(VDD = 26 Vdc, Pout = 18 W Avg., IDQ = 850 mA, f1 = 1930 MHz,
f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 =1990 MHz); ACPR
measured over 30 kHz bandwidth @ f1 -885 MHz and f2 =+885 MHz)
ACPR
—
-51
-48
dBc
Input Return Loss
(VDD = 26 Vdc, Pout = 18 W Avg., IDQ = 850 mA, f1 = 1930 MHz,
f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 =1990 MHz)
IRL
—
-12
-9
dB
1. Part is internally matched both on input and output.
(continued)
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