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參數(shù)資料
| 型號(hào)： | MRF18090BR3 |
| 廠商： | 飛思卡爾半導(dǎo)體(中國(guó))有限公司 |
| 英文描述： | RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| 中文描述： | 射頻功率場(chǎng)效應(yīng)晶體管N溝道增強(qiáng)型MOSFET的外側(cè) |
| 文件頁(yè)數(shù)： | 5/8頁(yè) |
| 文件大?。?/td> | 396K |
| 代理商： | MRF18090BR3 |
MRF18090BR3 MRF18090BSR3
5
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
IRL
1 W
P
in
= 5 W
Figure 5. Power Gain versus
Output Power
P
out
, OUTPUT POWER (WATTS)
10
Figure 6. Output Power versus Supply Voltage
0
V
DD
, SUPPLY VOLTAGE (VOLTS)
140
40
G
12
1
P
Figure 7. Output Power versus Frequency
120
f, FREQUENCY (GHz)
0
Figure 8. Output Power and Efficiency
versus Input Power
P
in
, INPUT POWER (WATTS)
20
1.91
0
15
1
120
20
20
2.01
60
1000
32
22
40
0
2
1.93
Figure 9. Wideband Gain and IRL
(at Small Signal)
16
f, FREQUENCY (GHz)
6
1.88
10
2.02
14
1.92
1.90
1.94
10
13
16
14
750 mA
500 mA
300 mA
I
DQ
= 1000 mA
26
1.95
3
4
5
6
60
50
40
10
0
V
DD
= 26 Vdc
f = 1990 MHz
11
12
28
20
24
80
,
o
2 W
P
in
= 5 W
I
DQ
= 750 mA
f = 1990 MHz
P
,
o
1.97
1.99
60
80
100
V
DD
= 26 Vdc
I
DQ
= 750 mA
1 W
2 W
40
60
80
P
,
o
20
30
P
out
V
DD
= 26 Vdc
I
DQ
= 750 mA
f = 1990 MHz
12
G
0
15
25
20
5
10
V
DD
= 26 Vdc
I
DQ
= 750 mA
G
ps
8
I
0.1
100
30
18
16
14
100
120
100
1.98
1.96
2.00
2.04
,
η
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF18090BS | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:RF POWER FIELD EFFECT TRANSISTORS |
| MRF18090BSR3 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF181S | 制造商:MOTOROLA 功能描述:SHELF STOCK |
| MRF182 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs |
| MRF182S | 制造商:Motorola Inc 功能描述:MOSFET Transistor, N-Channel, SOT-391B 制造商:Njs 功能描述:MOSFET Transistor, N-Channel, SOT-391B |
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