參數(shù)資料
型號: MRF18090BR3
廠商: 飛思卡爾半導(dǎo)體(中國)有限公司
英文描述: RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
中文描述: 射頻功率場效應(yīng)晶體管N溝道增強(qiáng)型MOSFET的外側(cè)
文件頁數(shù): 2/8頁
文件大?。?/td> 396K
代理商: MRF18090BR3
2
RF Device Data
Freescale Semiconductor
MRF18090BR3 MRF18090BSR3
Table 4. Electrical Characteristics
(T
C
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Drain-Source Breakdown Voltage
(V
GS
= 0 Vdc, I
D
= 100
μ
Adc)
V
(BR)DSS
65
Vdc
Zero Gate Voltage Drain Current
(V
DS
= 26 Vdc, V
GS
= 0 Vdc)
I
DSS
10
μ
Adc
Gate-Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
I
GSS
1
μ
Adc
On Characteristics
Gate Quiescent Voltage
(V
DS
= 26 Vdc, I
D
= 750 mAdc)
V
GS(Q)
2.5
3.7
4.5
Vdc
Drain-Source On-Voltage
(V
GS
= 10 Vdc, I
D
= 1 Adc)
V
DS(on)
0.1
Vdc
Forward Transconductance
(V
DS
= 10 Vdc, I
D
= 3 Adc)
g
fs
7.2
S
Dynamic Characteristics
Reverse Transfer Capacitance
(V
DS
= 26 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
C
rss
4.2
pF
Functional Tests
(In Freescale Test Fixture)
Common-Source Amplifier Power Gain @ 90 W
(1)
(V
DD
= 26 Vdc, I
DQ
= 750 mA, f = 1930 - 1990 MHz)
Drain Efficiency @ 90 W
(1)
(V
DD
= 26 Vdc, I
DQ
= 750 mA, f = 1930 - 1990 MHz)
Input Return Loss
(1)
(V
DD
= 26 Vdc, P
out
= 90 W CW, I
DQ
= 750 mA,
f = 1930 - 1990 MHz)
G
ps
12
13.5
dB
η
40
45
%
IRL
- 10
dB
1. To meet application requirements, Freescale test fixtures have been designed to cover the full GSM1900 band, ensuring batch-to-batch
consistency.
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