參數(shù)資料
型號(hào): MRF18060BS
廠商: MOTOROLA INC
元件分類: 功率晶體管
英文描述: RF Power MOSFETs(RF功率MOS場(chǎng)效應(yīng)管)
中文描述: L BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝: CASE 465A-06, 3 PIN
文件頁(yè)數(shù): 2/8頁(yè)
文件大?。?/td> 198K
代理商: MRF18060BS
MRF18060B MRF18060BS
2
MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS
(TC = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 10
μ
Adc)
V(BR)DSS
65
Vdc
Zero Gate Voltage Drain Current
(VDS = 26 Vdc, VGS = 0)
IDSS
6
μ
Adc
Gate–Source Leakage Current
(VGS = 5 Vdc, VDS = 0)
IGSS
1
μ
Adc
ON CHARACTERISTICS
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 300
μ
Adc)
VGS(th)
2
4
Vdc
Gate Quiescent Voltage
(VDS = 26 Vdc, ID = 500 mAdc)
VGS(Q)
2.5
3.9
4.5
Vdc
Drain–Source On–Voltage
(VGS = 10 Vdc, ID = 2 Adc)
VDS(on)
0.27
Vdc
Forward Transconductance
(VDS = 10 Vdc, ID = 2 Adc)
gfs
4.7
S
DYNAMIC CHARACTERISTICS
Input Capacitance (Including Input Matching Capacitor in Package) (1)
(VDS = 26 Vdc, VGS = 0, f = 1 MHz)
Ciss
160
pF
Output Capacitance (1)
(VDS = 26 Vdc, VGS = 0, f = 1 MHz)
Coss
740
pF
Reverse Transfer Capacitance
(VDS = 26 Vdc, VGS = 0, f = 1 MHz)
Crss
2.7
pF
FUNCTIONAL TESTS
(In Motorola Test Fixture)
Common–Source Amplifier Power Gain @ 60 W (2)
(VDD = 26 Vdc, IDQ = 500 mA, f = 1930 – 1990 MHz)
Gps
11.5
13
dB
Drain Efficiency @ 60 W (2)
(VDD = 26 Vdc, IDQ = 500 mA, f = 1930 – 1990 MHz)
η
40
45
%
Input Return Loss (2)
(VDD = 26 Vdc, Pout = 60 W CW, IDQ = 500 mA,
f = 1930 – 1990 MHz)
IRL
10
dB
Output Mismatch Stress
(VDD = 26 Vdc, Pout = 60 W CW, IDQ = 500 mA VSWR = 10:1,
All Phase Angles at Frequency of Tests)
Ψ
No Degradation In Output Power
Before and After Test
(1) Part is internally matched both on input and output.
(2) To meet application requirements, Motorola test fixtures have been designed to cover the full GSM1900 band, ensuring batch–to–batch
consistency.
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