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參數(shù)資料
| 型號： | MRF18060BS |
| 廠商： | MOTOROLA INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | RF Power MOSFETs(RF功率MOS場效應(yīng)管) |
| 中文描述： | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | CASE 465A-06, 3 PIN |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 198K |
| 代理商： | MRF18060BS |
1
MRF18060B MRF18060BS
MOTOROLA RF DEVICE DATA
Motorola, Inc. 1999
The RF MOSFET Line
N–Channel Enhancement–Mode Lateral MOSFETs
Designed for PCN and PCS base station applications from frequencies up to
1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier
applications. To be used in class AB for PCN–PCS/cellular radio and WLL
applications. Specified for GSM1930 – 1990 MHz.
GSM Performance, Full Frequency Band (1930 – 1990 MHz)
Power Gain — 13 dB (Typ) @ 60 Watts (CW)
Efficiency — 45% (Typ) @ 60 Watts (CW)
Internally Matched, Controlled Q, for Ease of Use
High Gain, High Efficiency and High Linearity
Integrated ESD Protection: Class 2 Human Body Model, Class M3
Machine Model
Ease of Design for Gain and Insertion Phase Flatness
Capable of Handling 10:1 VSWR, @ 26 Vdc, 60 Watts (CW) Output Power
Excellent Thermal Stability
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain–Source Voltage
VDSS
VGS
PD
65
Vdc
Gate–Source Voltage
+15, –0.5
Vdc
Total Device Dissipation @ TC > = 25
°
C
Derate above 25
°
C
180
1.03
Watts
W/
°
C
Storage Temperature Range
Tstg
TJ
–65 to +150
°
C
Operating Junction Temperature
200
°
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
θ
JC
0.97
°
C/W
NOTE –
CAUTION
– MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Order this document
by MRF18060B/D
SEMICONDUCTOR TECHNICAL DATA
60 W, 1.90 – 1.99 GHz, 26 V
LATERAL N–CHANNEL
BROADBAND
RF POWER MOSFETs
CASE 465–04, STYLE 1
(MRF18060B)
CASE 465A–04, STYLE 1
(MRF18060BS)
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| MRF18090BS | RF Power MOSFETs(RF功率MOS場效應(yīng)管) |
| MRF18090B | RF Power MOSFETs(RF功率MOS場效應(yīng)管) |
| MRF184 | LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF18060BSR3 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:RF Power Field Effect Transistors |
| MRF18060BST | 制造商:Motorola Inc 功能描述:MOSFET Transistor, N-Channel, SOT-391BVAR |
| MRF18085A | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors |
| MRF18085ALR3 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors |
| MRF18085ALSR3 | 功能描述:射頻MOSFET電源晶體管 RF POWER LDMOS NI-780LS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
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