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參數(shù)資料
| 型號(hào)： | MRF18030BLR3 |
| 廠商： | 飛思卡爾半導(dǎo)體(中國)有限公司 |
| 英文描述： | RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| 中文描述： | 射頻功率場(chǎng)效應(yīng)晶體管N溝道增強(qiáng)型MOSFET的外側(cè) |
| 文件頁數(shù)： | 7/8頁 |
| 文件大?。?/td> | 357K |
| 代理商： | MRF18030BLR3 |
MRF18030BLR3 MRF18030BLSR3
7
RF Device Data
Freescale Semiconductor
PACKAGE DIMENSIONS
CASE 465E-04
ISSUE F
NI-400
MRF18030BLR3
NOTES:
1. CONTROLLING DIMENSION: INCH.
2. INTERPRET DIMENSIONS AND TOLERANCES
PERASMEY14.5M,1994.
3. DIMENSION H IS MEASURED 0.030 (0.762)
AWAY FROM PACKAGE BODY.
4. INFORMATION ONLY: CORNER BREAK (4X) TO
BE.060
.005(1.52
0.13) RADIUS OR .06
.005
(1.52
±
0.13)x45
°
CHAMFER.
STYLE1:
PIN1. DRAIN
2. GATE
3. SOURCE
SEATING
PLANE
2X D
N (LID)
E
R (LID)
F
2X K
A
T
C
M
B
M
bbb
A
M
T
H
B
B
G
A
M
A
M
ccc
B
M
T
M
A
M
bbb
B
M
T
1
2
3
2X Q
M
(INSULATOR)
S
(INSULATOR)
M
A
M
ccc
B
M
T
M
A
M
aaa
B
M
T
M
A
M
aaa
B
M
T
DIM
A
B
C
D
E
F
G
H
K
M
N
Q
R
S
aaa
bbb
ccc
MIN
.795
.380
.125
.275
.035
.004
.600BSC
MAX
.805
.390
.163
.285
.045
.006
MIN
20.19
9.65
3.17
6.98
0.89
0.10
15.24BSC
MAX
20.44
9.9
4.14
7.24
1.14
0.15
MILLIMETERS
INCHES
.057
.092
.395
.395
.120
.395
.395
.005BSC
.010BSC
.015BSC
.067
.122
.405
.405
.130
.405
.405
1.45
2.33
10
10
3.05
10
10
0.127BSC
0.254BSC
0.381BSC
1.7
3.1
10.3
10.3
3.3
10.3
10.3
SEE NOTE 4
CASE 465F-04
ISSUE E
NI-400S
MRF18030BLSR3
NOTES:
1. CONTROLLING DIMENSION: INCH.
2. INTERPRET DIMENSIONS AND TOLERANCES
PERASMEY14.5M1994.
3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
STYLE1:
PIN1. DRAIN
2. GATE
3. SOURCE
1
SEATING
PLANE
2
E
F
2X K
M
A
M
bbb
B
M
T
A
T
C
H
B
A
DIM
A
B
C
D
E
F
H
K
M
N
R
MIN
.395
.395
.125
.275
.035
.004
.057
.092
.395
.395
.395
MAX
.405
.405
.163
.285
.045
.006
.067
.122
.405
.405
.405
MIN
10.03
10.03
3.18
6.98
0.89
0.10
1.45
2.34
10.03
10.03
10.03
MAX
10.29
10.29
4.14
7.24
1.14
0.15
1.70
3.10
10.29
10.29
10.29
MILLIMETERS
INCHES
S
.395
.005REF
.010REF
.015REF
.405
10.03
0.127REF
0.254REF
0.38REF
10.29
aaa
bbb
ccc
2X D
M
A
M
ccc
B
M
T
M
A
M
ccc
B
M
T
M
A
M
aaa
B
M
T
N
(LID)
M
(INSULATOR)
(FLANGE)
3
(FLANGE)
R
(LID)
S
(INSULATOR)
aaa
M
A
M
B
M
T
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF18030BLSR3 | 制造商:Rochester Electronics LLC 功能描述: 制造商:Freescale Semiconductor 功能描述: |
| MRF18030BR3 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:THE RF MOSFET LINE RF POWER FIELD EFFECT TRANSISTORS N - CHANNEL ENHANCEMENT - MODE LATERAL MOSFETS |
| MRF18030BSR3 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:THE RF MOSFET LINE RF POWER FIELD EFFECT TRANSISTORS N - CHANNEL ENHANCEMENT - MODE LATERAL MOSFETS |
| MRF1803BR3 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:THE RF MOSFET LINE RF POWER FIELD EFFECT TRANSISTORS N - CHANNEL ENHANCEMENT - MODE LATERAL MOSFETS |
| MRF1803BSR3 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:THE RF MOSFET LINE RF POWER FIELD EFFECT TRANSISTORS N - CHANNEL ENHANCEMENT - MODE LATERAL MOSFETS |
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