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參數(shù)資料
| 型號： | MRF1535T1 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272AA |
| 封裝： | PLASTIC, CASE 1264-09, TO-272, 6 PIN |
| 文件頁數(shù)： | 9/16頁 |
| 文件大小： | 537K |
| 代理商： | MRF1535T1 |
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RF Device Data
Freescale Semiconductor
MRF1535T1 MRF1535FT1
Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Drain-Source Breakdown Voltage
(VGS = 0 Vdc, ID = 100 μAdc)
V(BR)DSS
60
—
Vdc
Zero Gate Voltage Drain Current
(VDS = 60 Vdc, VGS = 0 Vdc)
IDSS
—
1
μAdc
Gate-Source Leakage Current
(VGS = 10 Vdc, VDS = 0 Vdc)
IGSS
—
0.3
μAdc
On Characteristics
Gate Threshold Voltage
(VDS = 12.5 Vdc, ID = 400 μA)
VGS(th)
1
—
2.6
Vdc
Drain-Source On-Voltage
(VGS = 5 Vdc, ID = 0.6 A)
RDS(on)
—
0.7
Ω
Drain-Source On-Voltage
(VGS = 10 Vdc, ID = 2.0 Adc)
VDS(on)
—
1
Vdc
Dynamic Characteristics
Input Capacitance (Includes Input Matching Capacitance)
(VDS = 12.5 Vdc, VGS = 0 V, f = 1 MHz)
Ciss
—
250
pF
Output Capacitance
(VDS = 12.5 Vdc, VGS = 0 V, f = 1 MHz)
Coss
—
150
pF
Reverse Transfer Capacitance
(VDS = 12.5 Vdc, VGS = 0 V, f = 1 MHz)
Crss
—
20
pF
RF Characteristics (In Freescale Test Fixture)
Common-Source Amplifier Power Gain
(VDD = 12.5 Vdc, Pout = 35 Watts, IDQ = 500 mA)
f = 520 MHz
Gps
10
—
dB
Drain Efficiency
(VDD = 12.5 Vdc, Pout = 35 Watts, IDQ = 500 mA)
f = 520 MHz
η
50
—
%
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相關代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF154 | 功能描述:射頻MOSFET電源晶體管 RF Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF154MP | 制造商:M/A-COM Technology Solutions 功能描述:RF POWER TRANSISTOR MOSFET |
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| MRF1550FT1 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:RF POWER FIELD EFFECT TRANSISTORS |
| MRF1550N | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors |
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