參數(shù)資料
型號(hào)： MRF1535T1
廠商： FREESCALE SEMICONDUCTOR INC
元件分類(lèi)： 功率晶體管
英文描述： UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272AA
封裝： PLASTIC, CASE 1264-09, TO-272, 6 PIN
文件頁(yè)數(shù)： 1/16頁(yè)
文件大?。?/td> 537K
代理商： MRF1535T1
AR
C
HIVE
INF
O
RMA
TI
O
N
ARCHIVE
INFORMA
TION
Replaced by MRF1535NT1/FNT1. There are no form, fit or function changes with this
part replacement. N suffix added to part number to indicate transition to lead-free
terminations.
MRF1535T1 MRF1535FT1
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistors
N-Channel Enhancement-Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with frequen-
cies to 520 MHz. The high gain and broadband performance of these devices
make them ideal for large -signal, common source amplifier applications in
12.5 volt mobile FM equipment.
Specified Performance @ 520 MHz, 12.5 Volts
Output Power — 35 Watts
Power Gain — 10.0 dB
Efficiency — 50%
Capable of Handling 20:1 VSWR, @ 15.6 Vdc, 520 MHz, 2 dB Overdrive
Excellent Thermal Stability
Characterized with Series Equivalent Large-Signal Impedance Parameters
Broadband -Full Power Across the Band: 135-175 MHz
400-470 MHz
450-520 MHz
Broadband UHF/VHF Demonstration Amplifier Information Available
Upon Request
200_C Capable Plastic Package
In Tape and Reel. T1 Suffix = 500 Units per 44 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain-Source Voltage
VDSS
-0.5, +40
Vdc
Gate-Source Voltage
VGS
±20
Vdc
Drain Current — Continuous
ID
6
Adc
Total Device Dissipation @ TC = 25°C (1)
Derate above 25°C
PD
135
0.50
W
W/°C
Storage Temperature Range
Tstg
- 65 to +150
°C
Operating Junction Temperature
TJ
200
°C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction to Case
RθJC
0.90
°C/W
Table 3. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
Per JESD 22-A113, IPC/JEDEC J-STD-020
1
260
°C
1. Calculated based on the formula PD =
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Document Number: MRF1535T1
Rev. 8, 5/2006
Freescale Semiconductor
Technical Data
520 MHz, 35 W, 12.5 V
LATERAL N-CHANNEL
BROADBAND
RF POWER MOSFETs
CASE 1264-09, STYLE 1
TO-272-6 WRAP
PLASTIC
MRF1535T1
MRF1535FT1
CASE 1264A-02, STYLE 1
TO-272-6
PLASTIC
MRF1535FT1
TJ– TC
RθJC
Freescale Semiconductor, Inc., 2006. All rights reserved.
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