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參數(shù)資料
| 型號(hào)： | MRF1535T1 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272AA |
| 封裝： | PLASTIC, CASE 1264-09, TO-272, 6 PIN |
| 文件頁數(shù)： | 6/16頁 |
| 文件大?。?/td> | 537K |
| 代理商： | MRF1535T1 |
14
RF Device Data
Freescale Semiconductor
MRF1535T1 MRF1535FT1
PACKAGE DIMENSIONS
TO-272-6 WRAP
PLASTIC
MRF1535T1
CASE 1264-09
ISSUE K
NOTES:
1. CONTROLLING DIMENSION: INCH .
2. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M, 1994.
3. DATUM PLANE H IS LOCATED AT TOP OF LEAD
AND IS COINCIDENT WITH THE LEAD WHERE
THE LEAD EXITS THE PLASTIC BODY AT THE
TOP OF THE PARTING LINE.
4. DIMENSION D AND E1 DO NOT INCLUDE MOLD
PROTRUSION. ALLOWABLE PROTRUSION IS
0.006 PER SIDE. DIMENSION D AND E1 DO
INCLUDE MOLD MISMATCH AND ARE
DETERMINED AT DATUM PLANE H.
5. DIMENSIONS b1 AND b3 DO NOT INCLUDE
DAMBAR PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.005 TOTAL IN EXCESS
OF THE b1 AND b2 DIMENSIONS AT MAXIMUM
MATERIAL CONDITION.
6. CROSSHATCHING REPRESENTS THE EXPOSED
AREA OF THE HEAT SLUG.
L
A1
q
c1
H
D
C
A
B
M
aaa
D
SEATING
PLANE
DATUM
PLANE
SEATING
PLANE
2X
b1
A
E1
r1
DRAIN ID
e
4X
D
4X
b2
D1
A
M
aaa
DA
M
aaa
DA
E
DRAIN ID
Y
A2
DIM
A
MIN
MAX
MIN
MAX
MILLIMETERS
0.098
0.108
2.49
2.74
INCHES
A1
0.000
0.004
0.00
0.10
A2
0.100
0.104
2.54
2.64
D
0.928
0.932
23.57
23.67
D1
0.806
0.814
20.47
20.68
E
0.296
0.304
7.52
7.72
E1
0.248
0.252
6.30
6.40
L
0.060
0.070
1.52
1.78
b1
0.193
0.199
4.90
5.05
b2
0.078
0.084
1.98
2.13
c1
0.007
0.011
0.18
0.28
e
r1
0.063
0.068
1.60
1.73
0
6
0
6
aaa
1
2
3
4
5
6
3
2
1
6
5
4
VIEW Y-Y
0.193 BSC
q
0.004
__
4.90 BSC
0.10
__
STYLE 1:
PIN 1. SOURCE (COMMON)
2. DRAIN
3. SOURCE (COMMON)
4. SOURCE (COMMON)
5. GATE
6. SOURCE (COMMON)
4X
b3
b3
0.088
0.094
2.24
2.39
NOTE 6
E2
E2
0.241
0.245
6.12
6.22
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