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參數(shù)資料
| 型號： | MRF10150 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | Microwave Power Transistor, NPN Silicon(微波NPN硅射頻功率晶體管) |
| 中文描述： | L BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | HERMETIC SEALED, CASE 376B-02, 2 PIN |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 90K |
| 代理商： | MRF10150 |
MRF10150
2
MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS
(TC = 25
°
C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (IC = 60 mAdc, VBE = 0)
Collector–Base Breakdown Voltage (IC = 60 mAdc, IE = 0)
Emitter–Base Breakdown Voltage (IE = 10 mAdc, IC = 0)
Collector Cutoff Current (VCB = 36 Vdc, IE = 0)
ON CHARACTERISTICS
V(BR)CES
V(BR)CBO
V(BR)EBO
ICBO
65
—
—
Vdc
65
—
—
Vdc
3.5
—
—
Vdc
—
—
25
mAdc
DC Current Gain (IC = 5.0 Adc, VCE = 5.0 Vdc)
FUNCTIONAL TESTS
hFE
20
—
—
—
Common–Base Amplifier Power Gain
(VCC = 50 Vdc, Pout = 150 W Peak, f = 1090 MHz)
GPB
9.5
10
—
dB
Collector Efficiency
(VCC = 50 Vdc, Pout = 150 W Peak, f = 1090 MHz)
η
40
—
—
%
Load Mismatch
(VCC = 50 Vdc, Pout = 150 W Peak, f = 1090 MHz,
VSWR = 10:1 All Phase Angles)
ψ
No Degradation in Output Power
Figure 1. Test Circuit
.15
.625
.275
1.751
.787
.081
.081
.37
.583
1.803
.522
.081
1.383
.081
0.943
.489
1.0
.081
Z5
Z1
Z2
Z3
Z4
Z6
Z7
Z8
Z9
D.U.T.
RF
INPUT
RF
OUTPUT
+
–
+
C2
C3
C4
L1
C1
C1 — 82 pF 100 Mil Chip Capacitor
C2 — 39 pF 100 Mil Chip Capacitor
C3 — 0.1
μ
F
C4 — 100
μ
F, 100 Vdc, Electrolytic
L1 — 3 Turns #18 AWG, 1/8
″
ID, 0.18 Long
Z1–Z9 — Microstrip, See Details
Board Material — Teflon Glass Laminate
Dielectric Thickness = 0.030
″
ε
r = 2.55, 2 Oz. Copper
.363
.334
.
.
.
.
.
.081
.100
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