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參數(shù)資料
| 型號： | MRF15090 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | NPN Silicon RF Power Transistor(NPN硅射頻功率晶體管) |
| 中文描述： | 2 CHANNEL, L BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | CASE 375A-01, 5 PIN |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 189K |
| 代理商： | MRF15090 |
1
MRF15090
MOTOROLA RF DEVICE DATA
Motorola, Inc. 1998
The RF Line
Designed for 26 volts microwave large–signal, common emitter, class A and
class AB linear amplifier applications in industrial and commercial FM/AM
equipment operating in the range 1400–1600 MHz.
Specified 26 Volts, 1490 MHz, Class AB Characteristics
Output Power — 90 Watts (PEP)
Gain — 7.5 dB Min @ 90 Watts (PEP)
Collector Efficiency — 30% Min @ 90 Watts (PEP)
Intermodulation Distortion — –28 dBc Max @ 90 Watts (PEP)
Third Order Intercept Point — 56.5 dBm Typ @ 1490 MHz, VCE = 24 Vdc,
IC = 5 Adc
Characterized with Series Equivalent Large–Signal Parameters from
1400–1600 MHz
Characterized with Small–Signal S–Parameters from 1000–2000 MHz
Silicon Nitride Passivated
100% Tested for Load Mismatch Stress at All Phase Angles with 3:1 Load
VSWR @ 28 Vdc, and Rated Output Power
Gold Metallized, Emitter Ballasted for Long Life and Resistance to
Metal Migration
Circuit board photomaster available upon request by contacting
RF Tactical Marketing in Phoenix, AZ.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCEO
VCES
VEBO
IC
PD
25
Vdc
Collector–Emitter Voltage
60
Vdc
Emitter–Base Voltage
4
Vdc
Collector–Current — Continuous @ TJ(max) = 150
°
C
Total Device Dissipation @ TC = 25
°
C
Derate above 25
°
C
15
Adc
250
1.43
Watts
W/
°
C
Storage Temperature Range
Tstg
– 65 to +150
°
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
°
C/W
Thermal Resistance, Junction to Case
R
θ
JC
0.70
ELECTRICAL CHARACTERISTICS
(TC = 25
°
C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 50 mAdc, IB = 0)
Collector–Emitter Breakdown Voltage
(IC = 50 mAdc, VBE = 0)
Collector–Emitter Breakdown Voltage
(IC = 50 mAdc, RBE = 100
)
V(BR)CEO
25
28
—
Vdc
V(BR)CES
60
65
—
Vdc
V(BR)CER
30
—
—
Vdc
(continued)
Order this document
by MRF15090/D
SEMICONDUCTOR TECHNICAL DATA
90 W, 1.5 GHz
RF POWER TRANSISTOR
NPN SILICON
CASE 375A–01, STYLE 1
REV 7
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相關代理商/技術參數(shù) |
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| MRF150J | 功能描述:射頻MOSFET電源晶體管 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF150MP | 制造商:M/A-COM Technology Solutions 功能描述:RF POWER TRANSISTOR MOSFET |
| MRF151 | 功能描述:射頻MOSFET電源晶體管 5-175MHz 150Watts 50Volt Gain 18dB RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF1511N | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor |
| MRF1511NT1 | 功能描述:射頻MOSFET電源晶體管 RF LDMOS FET PLD1.5N RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
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