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參數(shù)資料
| 型號： | MRF1511T1 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | RF Power MOSFETs(RF功率MOS場效應(yīng)管) |
| 中文描述： | VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | POWER, PLASTIC, CASE 466-02, 4 PIN |
| 文件頁數(shù)： | 1/12頁 |
| 文件大小： | 229K |
| 代理商： | MRF1511T1 |
1
MRF1511T1
Motorola, Inc. 2000
The RF MOSFET Line
N–Channel Enhancement–Mode Lateral MOSFET
The MRF1511T1 is designed for broadband commercial and industrial
applications at frequencies to 175 MHz. The high gain and broadband
performance of this device makes it ideal for large–signal, common source
amplifier applications in 7.5 volt portable FM equipment.
Specified Performance @ 175 MHz, 7.5 Volts
Output Power — 8 Watts
Power Gain — 11.5 dB
Efficiency — 55%
Capable of Handling 20:1 VSWR, @ 9.5 Vdc,
175 MHz, 2 dB Overdrive
Excellent Thermal Stability
Characterized with Series Equivalent Large–Signal
Impedance Parameters
Broadband UHF/VHF Demonstration Amplifier Information
Available Upon Request
RF Power Plastic Surface Mount Package
Available in Tape and Reel.
T1 Suffix = 1,000 Units per 12 mm, 7 Inch Reel.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain–Source Voltage
VDSS
VGS
ID
PD
40
Vdc
Gate–Source Voltage
±
20
Vdc
Drain Current — Continuous
4
Adc
Total Device Dissipation @ TC = 25
°
C (1)
Derate above 25
°
C
62.5
0.5
Watts
W/
°
C
Storage Temperature Range
Tstg
TJ
–65 to +150
°
C
Operating Junction Temperature
150
°
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
θ
JC
2
°
C/W
(1) Calculated based on the formula PD =
NOTE –
CAUTION
– MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Order this document
by MRF1511/D
SEMICONDUCTOR TECHNICAL DATA
175 MHz, 8 W, 7.5 V
LATERAL N–CHANNEL
BROADBAND
RF POWER MOSFET
CASE 466–02, STYLE 1
(PLD–1.5)
PLASTIC
G
D
S
TJ –TC
R
θ
JC
REV 1
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| MRF1513N | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor |
| MRF1513NT1 | 功能描述:射頻MOSFET電源晶體管 RF LDMOS FET PLD1.5 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF1513NT1_08 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor |
| MRF1513NT1_0806 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor |
| MRF1513NT1-CUT TAPE | 制造商:Freescale 功能描述:MRF1513NT1 Series 520 MHz 3 W 12.5 V Lateral N-Ch Broadband RF Power Mosfet |
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