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參數(shù)資料
| 型號(hào)： | MRF10120 |
| 廠(chǎng)商： | MOTOROLA INC |
| 元件分類(lèi)： | 功率晶體管 |
| 英文描述： | Microwave Power Transistor, NPN Silicon(微波NPN硅射頻功率晶體管) |
| 中文描述： | L BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | HERMETIC SEALED, CASE 355C-02, 2 PIN |
| 文件頁(yè)數(shù)： | 2/4頁(yè) |
| 文件大小： | 98K |
| 代理商： | MRF10120 |
MRF10120
2
MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS — continued
(TC = 25
°
C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS
DC Current Gain (IC = 5.0 Adc, VCE = 5.0 Vdc)
FUNCTIONAL TESTS
(7.0
μ
s Pulses @ 54% duty cycle for 3.4 ms; then off for 4.5 ms; overall duty cycle = 23%)
Common–Base Amplifier Power Gain
(VCC = 36 Vdc, Pout = 120 W Peak, f = 1215 MHz)
hFE
20
—
—
—
GPB
8.0
9.2
—
dB
Collector Efficiency
(VCC = 36 Vdc, Pout = 120 W Peak, f = 1215 MHz)
η
50
55
—
%
Load Mismatch
(VCC = 36 Vdc, Pout = 120 W Peak, f = 1215 MHz,
VSWR = 3:1 All Phase Angles)
ψ
No Degradation in Output Power
Figure 1. Test Circuit
Z1–Z9 — Microstrip, See Details
Board Material — Teflon
/Glass Laminate,
Dielectric Thickness = 0.030
″
,
ε
r = 2.55, 2 Oz. Copper
C1 — 270 pF 100 Mil Chip Capacitor
C2 — 220 pF 100 Mil Chip Capacitor
C3 — 0.1
μ
F
C4 — 47
μ
F 50 V Electrolytic
L1 — 3 Turns #18 AWG, 1/8
″
ID, 0.18 Long
RF
INPUT
RF
OUTPUT
C1
36 Vdc
–
+
D.U.T.
Z1
+
L1
Z2
Z3
Z4
Z6
Z7
Z8
Z9
Z5
C2
C3
C4
ALL DIMENSIONS IN INCHES
1.00
0.4
0.2
0.15
1.1
0.15
0.3
0.6
0.081
0.91
0.6
0.66
0.55
0.22
1.06
0.52
0.8
0.081
0.05
0.44
0.74
0.3
0.13
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