參數(shù)資料
型號: MR1A08AYS35
廠商: 飛思卡爾半導(dǎo)體(中國)有限公司
英文描述: 64K x 16-Bit 3.3-V Asynchronous Magnetoresistive RAM
中文描述: 64K的x 16位的3.3V異步磁阻隨機存取內(nèi)存
文件頁數(shù): 5/20頁
文件大?。?/td> 148K
代理商: MR1A08AYS35
Electrical Specifications
MR0A16A Advanced Information Data Sheet, Rev. 0
Freescale Semiconductor
5
Direct Current (dc)
Table 5. dc Characteristics
Parameter
Symbol
I
lkg(I)
I
lkg(O)
Min
Typ
Max
±
1
±
1
Unit
μ
A
μ
A
Input leakage current
Output leakage current
Output low voltage
(I
OL
= +4 mA)
(I
OL
= +100
μ
A)
Output high voltage
(I
OH
= –4 mA)
(I
OH
= –100 mA)
V
OL
0.4
V
SS
+ 0.2
V
V
OH
2.4
V
DD
– 0.2
V
Table 6. Power Supply Characteristics
Parameter
Symbol
Typ
Max
Unit
ac active supply current — read modes
1
(I
Out
= 0 mA, V
DD
= max)
ac active supply current — write modes
1
(V
DD
= max)
ac standby current
(V
DD
= max, E = V
IH
)
(no other restrictions on other inputs)
CMOS standby current
(E
V
DD
– 0.2 V and V
In
V
SS
+ 0.2 V or
V
DD
– 0.2 V)
(V
DD
= max, f = 0 MHz)
NOTES:
1
All active current measurements are measured with one address transition per cycle.
I
DDR
TBD
TBD
mA
I
DDW
TBD
TBD
mA
I
SB1
TBD
TBD
mA
I
SB2
TBD
TBD
mA
Table 7. Capacitance
1
Parameter
Symbol
Typ
Max
Unit
Address input capacitance
C
In
6
pF
Control input capacitance
C
In
6
pF
Input/output capacitance
C
I/O
8
pF
NOTES:
1
f = 1.0 MHz, dV = 3.0 V, T
A
= 25C, periodically sampled rather than 100% tested.
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