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參數資料
| 型號： | MR1A08AYS35 |
| 廠商： | 飛思卡爾半導體(中國)有限公司 |
| 英文描述： | 64K x 16-Bit 3.3-V Asynchronous Magnetoresistive RAM |
| 中文描述： | 64K的x 16位的3.3V異步磁阻隨機存取內存 |
| 文件頁數： | 4/20頁 |
| 文件大?。?/td> | 148K |
| 代理商： | MR1A08AYS35 |
MR0A16A Advanced Information Data Sheet, Rev. 0
4
Freescale Semiconductor
Electrical Specifications
Table 3. Absolute Maximum Ratings
1
Parameter
Symbol
V
DD
V
In
I
Out
P
D
Value
–0.5 to 4.0
–0.5 to V
DD
+ 0.5
±
20
0.600
Unit
V
V
mA
W
Supply voltage
2
Voltage on any pin
2
Output current per pin
Package power dissipation
3
Temperature under bias
MR0A16AYS35 (Commercial)
MR0A16ACYS35 (Industrial)
MR0A16AVYS35 (Extended)
Storage temperature
Lead temperature during solder (3 minute max)
Maximum magnetic field during write
MR0A16AYS35 (Commercial)
MR0A16ACYS35 (Industrial)
MR0A16AVYS35 (Extended)
Maximum magnetic field during read or standby
MR0A16AYS35 (Commercial)
MR0A16ACYS35 (Industrial)
MR0A16AVYS35 (Extended)
T
Bias
–10 to 85
–45 to 95
–45 to 110
–55 to 150
260
C
T
stg
T
Lead
C
C
H
max_write
15
25
25
Oe
H
max_read
100
100
100
Oe
NOTES:
1
Permanent device damage may occur if absolute maximum ratings are exceeded. Functional operation
should be restricted to recommended operating conditions. Exposure to excessive voltages or magnetic
fields could affect device reliability.
All voltages are referenced to V
SS
.
Power dissipation capability depends on package characteristics and use environment.
2
3
Table 4. Operating Conditions
Parameter
Symbol
V
DD
V
WI
Min
3.0
1
2.5
Typ
3.3
2.7
Max
3.6
3.0
1
V
DD
+
0.3
2
0.8
Unit
V
V
Power supply voltage
Write inhibit voltage
Input high voltage
V
IH
2.2
—
V
Input low voltage
Operating temperature
MR0A16AYS35 (Commercial)
MR0A16ACYS35 (Industrial)
MR0A16AVYS35 (Extended)
V
IL
–0.5
3
—
V
T
A
0
-40
-40
70
85
105
C
NOTES:
1
After power up or if V
DD
falls below V
WI
, a waiting period of 2 ms must be observed, and E and W
must remain high for 2 ms. Memory is designed to prevent writing for all input pin conditions if V
DD
falls below minimum V
WI
.
V
IH
(max) = V
DD
+ 0.3 Vdc; V
IH
(max) = V
DD
+ 2.0 Vac (pulse width
≤
10 ns) for I
≤
20.0 mA.
V
IL
(min) = –0.5 Vdc; V
IL
(min) = –2.0 Vac (pulse width
≤
10 ns) for I
≤
20.0 mA.
2
3
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相關代理商/技術參數 |
參數描述 |
|---|---|
| MR1A16ACTS35C | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:256K x 16-Bit 3.3-V Asynchronous Magnetoresistive RAM |
| MR1A16ACYS35 | 功能描述:RAM其它 MRAM 2-MB TSOP IND 35NS RoHS:否 制造商:Freescale Semiconductor 封裝:Tray |
| MR1A16AVTS35C | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:256K x 16-Bit 3.3-V Asynchronous Magnetoresistive RAM |
| MR1A16AVYS35 | 功能描述:RAM其它 MRAM 2-MB TSOP EXT 35NS RoHS:否 制造商:Freescale Semiconductor 封裝:Tray |
| MR1A16AYS35 | 功能描述:RAM其它 MRAM 2-MB TSOP COM 35NS RoHS:否 制造商:Freescale Semiconductor 封裝:Tray |
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