參數(shù)資料
型號(hào): MR16R1624AF0-CK8
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: (16Mx16)x2(4/8/16)pcs RIMM Module based on 256Mb A-die, 32s banks,16K/32ms Ref, 2.5V
中文描述: (16Mx16顯示)× 2(4/8/16)件RIMM的模塊,基于256Mb阿芯片,32秒銀行,16K/32ms參考,為2.5V
文件頁(yè)數(shù): 6/16頁(yè)
文件大小: 419K
代理商: MR16R1624AF0-CK8
Page 5
Version 1.4 July 2002
MR16R1622(4/8/G)AF0
MR18R1622(4/8/G)AF0(1)
D
D
D
D
D
D
D
D
D
C
C
C
C
R
R
R
C
C
C
C
C
D
D
D
D
D
D
D
D
D
SIO0
SIO1
SCK
CMD
Vref
Direct RDRAM (256/288Mb)
R
R
R
R
R
R
R
R
R
R
R
R
R
R
R
R
R
R
R
R
R
R
R
R
R
R
R
R
R
R
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
U1
S
L
L
V
R
S
R
R
Vdd
Gnd
2 per
RDRAM device
0.22/0.1
μ
F
SCL
WP
SDA
A0 A1
SCL
SWP
SA0
SA1
SA2
SDA
Serial Presence Detect
Note 1. Rambus
Channel signals form a loop through
the RIMM module, with the exception of the SIO chain.
Note 2. See Serial Presence Detection Specification for
information on the SPD device and its contents.
D
D
D
D
D
D
D
D
D
C
C
C
C
R
R
R
C
C
C
U2
C
C
D
D
D
D
D
D
D
D
D
SIO0
SIO1
SCK
CMD
Vref
RDRAM Device(256/288Mb)
D
D
D
D
D
D
D
D
D
C
C
C
C
R
R
R
C
C
C
U3
C
C
D
D
D
D
D
D
D
D
D
SIO0
SIO1
SCK
CMD
Vref
RDRAM Device(256/288Mb)
D
D
D
D
D
D
D
D
D
C
C
C
C
R
R
R
C
C
C
UN
C
C
D
D
D
D
D
D
D
D
D
SIO0
SIO1
SCK
CMD
Vref
RDRAM Device(256/288Mb)
V
REF
Gnd
1 per
2 RDRAM devices
Plus one
Near Connector
V
CMOS
Gnd
1 per
2 RDRAM devices
0.22/0.1
μ
F
A2
U0
Vcc
SV
DD
0.22/0.1
μ
F
a
47K
Module
Capacity
N
512/576MB
16
256/288MB
8
128/144MB
4
64/72MB
2
a .
for 64/F : 800MHz products
0.22 μ
F : the other products
SV
DD
Gnd
0.22/0.1
μ
F
a
Figure 2: RIMM Module Functional Diagram
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