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參數(shù)資料
| 型號： | MR16R1624AF0-CK8 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | (16Mx16)x2(4/8/16)pcs RIMM Module based on 256Mb A-die, 32s banks,16K/32ms Ref, 2.5V |
| 中文描述： | （16Mx16顯示）× 2（4/8/16）件RIMM的模塊，基于256Mb阿芯片，32秒銀行，16K/32ms參考，為2.5V |
| 文件頁數(shù)： | 10/16頁 |
| 文件大?。?/td> | 419K |
| 代理商： | MR16R1624AF0-CK8 |
Page 9
Version 1.4 July 2002
MR16R1622(4/8/G)AF0
MR18R1622(4/8/G)AF0(1)
AC Electrical Specifications for RIMM Modules
Table 10: AC Electrical Specifications for RIMM Modules
Symbol
RIMM Module Capacity
512/576MB
256/288MB
128/144MB
64/72MB
Unit
Number of 256/288Mb RDRAM devices
16
8
4
2
Parameter and Condition for RIMM
Modules
Freq.
Max
Max
Max
Max
T
PD
Propagation Delay, all RSL signals
-1066
2.11
1.56
1.56
1.56
ns
-800
2.11
1.56
1.56
1.56
V
α
/V
IN
Attenuation Limit
-1066
27.0
17.0
17.0
17.0
%
-800
25.0
16.0
16.0
16.0
V
XF
/V
IN
Forward crosstalk coefficient
(300ps input rise time @ 20%-80%)
-1066
8.0
4.0
4.0
4.0
%
-800
8.0
4.0
4.0
4.0
V
XB
/V
IN
Backward crosstalk coefficient
(300ps input rise time @ 20%-80%)
-1066
2.5
2.0
2.0
2.0
%
-800
2.5
2.0
2.0
2.0
R
DC
DC Resistance Limit
-1066
1.2
0.8
0.6
0.6
-800
1.2
0.8
0.6
0.6
相關(guān)PDF資料 |
PDF描述 |
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| MR16R1624AF0-CM8 | (16Mx16)x2(4/8/16)pcs RIMM Module based on 256Mb A-die, 32s banks,16K/32ms Ref, 2.5V |
| MR16R1628AF0-CK8 | (16Mx16)x2(4/8/16)pcs RIMM Module based on 256Mb A-die, 32s banks,16K/32ms Ref, 2.5V |
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| MR18R1622AF0-CK8 | (16Mx16)x2(4/8/16)pcs RIMM Module based on 256Mb A-die, 32s banks,16K/32ms Ref, 2.5V |
| MR18R1624AF0-CK8 | (16Mx16)x2(4/8/16)pcs RIMM Module based on 256Mb A-die, 32s banks,16K/32ms Ref, 2.5V |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MR16R1624AF0-CM8 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:(16Mx16)x2(4/8/16)pcs RIMM Module based on 256Mb A-die, 32s banks,16K/32ms Ref, 2.5V |
| MR16R1624EG0-CK8 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:Key Timing Parameters |
| MR16R1624EG0-CM8 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:Key Timing Parameters |
| MR16R1624EG0-CM800 | 制造商:Samsung Semiconductor 功能描述:DRAM Module RDRAM 128Mbyte 184RIMM |
| MR16R1624EG0-CT9 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:Key Timing Parameters |
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