參數(shù)資料
型號: MPS6651G
廠商: ON SEMICONDUCTOR
元件分類: 功率晶體管
英文描述: Amplifier Transistors
中文描述: 1000 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
封裝: LEAD FREE, CASE 29-11, TO-226, 3 PIN
文件頁數(shù): 8/8頁
文件大?。?/td> 87K
代理商: MPS6651G
MPS6601, MPS6602 (NPN) MPS6651, MPS6652 (PNP)
http://onsemi.com
8
PACKAGE DIMENSIONS
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.
R
A
P
J
L
B
K
G
H
V
SECTION XX
C
D
N
N
X X
SEATING
PLANE
DIM
A
B
C
D
G
H
J
K
L
N
P
R
V
MIN
0.175
0.170
0.125
0.016
0.045
0.095
0.015
0.500
0.250
0.080
0.115
0.135
MAX
0.205
0.210
0.165
0.021
0.055
0.105
0.020
0.105
0.100
MIN
4.45
4.32
3.18
0.407
1.15
2.42
0.39
12.70
6.35
2.04
2.93
3.43
MAX
5.20
5.33
4.19
0.533
1.39
2.66
0.50
2.66
2.54
MILLIMETERS
INCHES
1
TO92 (TO226)
CASE 2911
ISSUE AL
STYLE 1:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
ON Semiconductor
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MPS6652G 功能描述:兩極晶體管 - BJT 1A 30V PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MPS6652RLRA 功能描述:兩極晶體管 - BJT 1A 30V PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MPS6652RLRAG 功能描述:兩極晶體管 - BJT 1A 30V PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MPS6652RLRP 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Amplifier Transistors