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參數(shù)資料
| 型號： | MP6M11 |
| 元件分類： | JFETs |
| 英文描述： | 3.5 A, 30 V, 0.14 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | MPT6, 6 PIN |
| 文件頁數(shù)： | 9/11頁 |
| 文件大?。?/td> | 1284K |
| 代理商： | MP6M11 |
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2011 ROHM Co., Ltd. All rights reserved.
Data Sheet
MP6M11
〈Tr.2(Pch)〉
0
1
2
3
0
0.2
0.4
0.6
0.8
1
V
GS= -2.5V
V
GS= -10V
V
GS= -4.5V
V
GS= -4.0V
V
GS= -2.8V
V
GS= -3.0V
Ta=25
°C
Pulsed
Fig.1 Typical Output Characteristics(Ⅰ)
DR
A
IN
CUR
RE
NT
:
-I
D
[A
]
DRAIN-SOURCE VOLTAGE :
-V
DS[V]
0
1
2
3
0
2
4
6
8
10
V
GS= -2.5V
V
GS= -3.0V
V
GS= -2.8V
V
GS= -10V
V
GS= -4.5V
V
GS= -4.0V
Ta=25
°C
Pulsed
Fig.2 Typical Output Characteristics(Ⅱ)
DRAIN-SOURCE VOLTAGE :
-V
DS[V]
DR
A
IN
CUR
RE
NT
:
-I
D
[A
]
0.001
0.01
0.1
1
10
0
1
2
3
V
DS= -10V
Pulsed
T
a= 125°C
T
a= 75°C
T
a= 25°C
T
a= - 25°C
Fig.3 Typical Transfer Characteristics
DR
A
IN
CUR
RE
NT
:
-I
D
[A
]
GATE-SOURCE VOLTAGE :
-V
GS[V]
10
100
1000
0.1
1
10
V
GS= -4.0V
V
GS= -4.5V
V
GS= -10V
Ta=25
°C
Pulsed
Fig.4 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅰ)
DRAIN-CURRENT :
-I
D[A]
S
T
A
T
IC
DRA
IN
-S
OURC
E
ON
-S
T
A
T
E
RE
S
IS
T
A
NC
E
:
R
DS
( on
)[m
]
10
100
1000
0.1
1
10
V
GS= -10V
Pulsed
T
a= 125°C
T
a= 75°C
T
a= 25°C
T
a= - 25°C
Fig.5 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅱ)
DRAIN-CURRENT :
-I
D[A]
S
T
A
T
IC
DRA
IN
-S
OURC
E
ON
-S
T
A
T
E
RE
S
IS
T
A
NC
E
:
R
DS
( on
)[m
]
10
100
1000
0.1
1
10
V
GS= -4.5V
Pulsed
T
a= 125°C
T
a= 75°C
T
a= 25°C
T
a= - 25°C
Fig.6 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅲ)
DRAIN-CURRENT :
-I
D[A]
S
T
A
T
IC
DRA
IN
-S
OURC
E
ON
-S
T
A
T
E
RE
S
IS
T
A
NC
E
:
R
DS
( on
)[m
]
7/10
2011.03 - Rev.A
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