參數(shù)資料
型號(hào): MP6M11
元件分類: JFETs
英文描述: 3.5 A, 30 V, 0.14 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET
封裝: MPT6, 6 PIN
文件頁(yè)數(shù): 5/11頁(yè)
文件大?。?/td> 1284K
代理商: MP6M11
www.rohm.com
2011 ROHM Co., Ltd. All rights reserved.
Data Sheet
MP6M11
Electrical characteristics (Ta = 25
C)
<Tr2(Pch)>
Symbol
Min.
Typ.
Max.
Unit
Gate-source leakage
IGSS
-
±10
AVGS=±20V, VDS=0V
Drain-source breakdown voltage V (BR)DSS
30
-
V
ID=1mA, VGS=0V
Zero gate voltage drain current
IDSS
-
1
AVDS=30V, VGS=0V
Gate threshold voltage
VGS (th)
1.0
-
2.5
V
VDS=10V, ID=1mA
-70
98
ID=3.5A, VGS=10V
-
100
140
ID=1.7A, VGS=4.5V
-
110
155
ID=1.7A, VGS=4.0V
Forward transfer admittance
l Yfs l
2.5
-
S
ID=3.5A, VDS=10V
Input capacitance
Ciss
-
410
-
pF
VDS=10V
Output capacitance
Coss
-
55
-
pF
VGS=0V
Reverse transfer capacitance
Crss
-
55
-
pF
f=1MHz
Turn-on delay time
td(on)
-9
-
ns
ID=1.7A, VDD 15V
Rise time
tr
-
18
-
ns
VGS=10V
Turn-off delay time
td(off)
-
35
-
ns
RL=8.8
Fall time
tf
-
12
-
ns
RG=10
Total gate charge
Qg
-
4.2
nC ID=3.5A
Gate-source charge
Qgs
-
1.7
-
nC VDD 15V
Gate-drain charge
Qgd
-
1.1
-
nC VGS=5V
*Pulsed
Body diode characteristics (Source-Drain) (Ta = 25
C)
Symbol
Min.
Typ.
Max.
Unit
Forward Voltage
VSD
--
1.2
V
Is=3.5A, VGS=0V
*Pulsed
Parameter
Conditions
m
Static drain-source on-state
resistance
RDS (on)
Parameter
*
3/10
2011.03 - Rev.A
相關(guān)PDF資料
PDF描述
MPC5123YVY300B RISC PROCESSOR, PBGA516
MPC5123VY300BR RISC PROCESSOR, PBGA516
SPC5121YVY400BR RISC PROCESSOR, PBGA516
MPC601CQ50A RISC PROCESSOR
MPC601CQ66A 32-BIT, 66 MHz, RISC PROCESSOR, CQFP304
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MP6M11TCR 制造商:ROHM Semiconductor 功能描述:MOSFET N/P-CH 30V 3.5A MPT6
MP6M12 制造商:ROHM 制造商全稱:Rohm 功能描述:4V Drive Nch + Pch MOSFET
MP6M12TCR 制造商:ROHM Semiconductor 功能描述:MOSFET N/P-CH 30V 5A MPT6
MP6M14 制造商:ROHM 制造商全稱:Rohm 功能描述:4V Drive Nch + Pch MOSFET
MP6M14TCR 制造商:ROHM Semiconductor 功能描述:MOSFET N-CH+P-CH 4V DUAL MPT6