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參數(shù)資料
| 型號： | MP6M11 |
| 元件分類： | JFETs |
| 英文描述： | 3.5 A, 30 V, 0.14 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | MPT6, 6 PIN |
| 文件頁數(shù)： | 4/11頁 |
| 文件大?。?/td> | 1284K |
| 代理商： | MP6M11 |
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Data Sheet
MP6M11
Electrical characteristics (Ta = 25
C)
<Tr1(Nch)>
Symbol
Min.
Typ.
Max.
Unit
Gate-source leakage
IGSS
-
±10
AVGS=±20V, VDS=0V
Drain-source breakdown voltage V (BR)DSS
30
-
V
ID=1mA, VGS=0V
Zero gate voltage drain current
IDSS
--
1
AVDS=30V, VGS=0V
Gate threshold voltage
VGS (th)
1.0
-
2.5
V
VDS=10V, ID=1mA
-70
98
ID=3.5A, VGS=10V
-
90
126
ID=3.5A, VGS=4.5V
-
100
140
ID=3.5A, VGS=4.0V
Forward transfer admittance
l Yfs l
1.5
-
S
VDS=10V, ID=3.5A
Input capacitance
Ciss
-
85
-
pF
VDS=10V
Output capacitance
Coss
-
40
-
pF
VGS=0V
Reverse transfer capacitance
Crss
-
20
-
pF
f=1MHz
Turn-on delay time
td(on)
-4
-
ns
ID=1.75A, VDD 15V
Rise time
tr
-8
-
ns
VGS=10V
Turn-off delay time
td(off)
-
18
-
ns
RL=8.6
Fall time
tf
-3
-
ns
RG=10
Total gate charge
Qg
-
1.9
-
nC ID=3.5A
Gate-source charge
Qgs
-
0.8
-
nC VDD 15V
Gate-drain charge
Qgd
-
0.4
-
nC VGS=5V
*Pulsed
Body diode characteristics (Source-Drain) (Ta = 25
C)
Symbol
Min.
Typ.
Max.
Unit
Forward Voltage
VSD
-
1.2
V
Is=3.5A, VGS=0V
*Pulsed
Parameter
Conditions
Parameter
Static drain-source on-state
resistance
RDS (on)
m
*
2/10
2011.03 - Rev.A
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| MP6M11TCR | 制造商:ROHM Semiconductor 功能描述:MOSFET N/P-CH 30V 3.5A MPT6 |
| MP6M12 | 制造商:ROHM 制造商全稱:Rohm 功能描述:4V Drive Nch + Pch MOSFET |
| MP6M12TCR | 制造商:ROHM Semiconductor 功能描述:MOSFET N/P-CH 30V 5A MPT6 |
| MP6M14 | 制造商:ROHM 制造商全稱:Rohm 功能描述:4V Drive Nch + Pch MOSFET |
| MP6M14TCR | 制造商:ROHM Semiconductor 功能描述:MOSFET N-CH+P-CH 4V DUAL MPT6 |
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