參數(shù)資料
型號(hào): MP4411
廠商: Toshiba Corporation
英文描述: TOSHIBA Power MOS FET Module Silicon N Channel MOS Type (Four L2-PIE-MOSV in One)
中文描述: 東芝功率場(chǎng)效應(yīng)晶體管模塊硅?頻道馬鞍山類型(四二級(jí)餡餅在一MOSV)
文件頁(yè)數(shù): 3/7頁(yè)
文件大小: 194K
代理商: MP4411
MP4411
2004-07-01
3
Source-Drain Diode Ratings and Characteristics
(Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current
I
DR
3
A
Pulse drain reverse current
I
DRP
12
A
Diode forward voltage
V
DSF
IDR = 3 A, VGS = 0 V
1.5
V
Reverse recovery time
t
rr
100
ns
Reverse recovery charge
Q
rr
IDR = 3 A, VGS = 0 V,
dIDR/dt = 50 A/μs
0.2
μC
Flyback-Diode Rating and Characteristics
(Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Forward current
I
FM
3
A
Reverse current
I
R
VR = 100 V
0.4
μA
Reverse voltage
V
R
I
R
= 100 μA
100
V
Forward voltage
V
F
I
F
= 0.5 A
1.8
V
Marking
MP4411
JAPAN
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
Part No. (or abbreviation code)
相關(guān)PDF資料
PDF描述
MP4412 Silicon N Channel MOS Type (Four L2-pi-MOSV inOne)
MP4501 N CHANNEL MSO TYPE (HIGH POWER HIGH SPEED SWITCHING APPLICATIONS HAMMER DRIVE, PULSE MOTOR DRIVE AND INDUCTIVE LOAD SWITCHING)
MP4502 10 AMP SUBMINIATURE POWER RELAY
MP4503 High Power Switching Applications Hammer Drive, Pulse Motor Drive and Inductive Load Switching
MP4504 High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching.
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