參數(shù)資料
型號: MP4411
廠商: Toshiba Corporation
英文描述: TOSHIBA Power MOS FET Module Silicon N Channel MOS Type (Four L2-PIE-MOSV in One)
中文描述: 東芝功率場效應(yīng)晶體管模塊硅?頻道馬鞍山類型(四二級餡餅在一MOSV)
文件頁數(shù): 2/7頁
文件大?。?/td> 194K
代理商: MP4411
MP4411
2004-07-01
2
Array Configuration
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance from channel to
ambient
(4-device operation, Ta = 25°C)
Σ
R
th (ch-a)
28.4
°C/W
Thermal resistance from channel to
case
(4-device operation, Tc = 25°C)
Σ
R
th (ch-c)
4.46
°C/W
Maximum lead temperature for
soldering purposes
(3.2 mm from case for t = 10 s)
T
L
260
°C
Electrical Characteristics
(Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
I
GSS
V
GS
= ±16 V, V
DS
= 0 V
±10
μA
Drain cut-off current
I
DSS
V
DS
= 100 V, V
GS
= 0 V
100
μA
Drain-source breakdown voltage
V
(BR) DSS
I
D
= 10 mA, V
GS
= 0 V
100
V
Gate threshold voltage
V
th
V
DS
= 10 V, I
D
= 1 mA
0.8
2.0
V
V
GS
= 4 V, I
D
= 2 A
0.36
0.45
Drain-source ON resistance
R
DS (ON)
V
GS
= 10 V, I
D
= 2 A
0.28
0.35
Forward transfer admittance
|Y
fs
|
V
DS
= 10 V, I
D
= 2 A
1.5
3.5
S
Input capacitance
C
iss
280
pF
Reverse transfer capacitance
C
rss
50
pF
Output capacitance
C
oss
V
DS
= 10 V, V
GS
= 0 V, f = 1 MHz
105
pF
Rise time
t
r
20
Turn-on time
t
on
50
Fall time
t
f
40
Switching time
Turn-off time
t
off
V
IN
: t
r
, t
f
< 5 ns, duty
1%, t
w
= 10 μs
170
ns
Total gate charge
(gate-source plus gate-drain)
Q
g
13.5
nC
Gate-source charge
Q
gs
8.5
nC
Gate-drain (“miller”) charge
Q
gd
V
DD
80 V, V
GS
= 10 V, I
D
= 3 A
5
nC
10
V
V
GS
R
L
V
DD
50 V
I
D
= 2
A
V
OUT
5
0 V
5
4
2
3
1
6
12
11
9
10
8
7
相關(guān)PDF資料
PDF描述
MP4412 Silicon N Channel MOS Type (Four L2-pi-MOSV inOne)
MP4501 N CHANNEL MSO TYPE (HIGH POWER HIGH SPEED SWITCHING APPLICATIONS HAMMER DRIVE, PULSE MOTOR DRIVE AND INDUCTIVE LOAD SWITCHING)
MP4502 10 AMP SUBMINIATURE POWER RELAY
MP4503 High Power Switching Applications Hammer Drive, Pulse Motor Drive and Inductive Load Switching
MP4504 High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching.
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