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參數(shù)資料
| 型號(hào)： | MP4305 |
| 廠商： | Toshiba Corporation |
| 英文描述： | TOSHIBA Power Transistor Module Silicon PNP Epitaxial Type (Darlington power transistor 4 in 1) |
| 中文描述： | 東芝功率晶體管模塊硅外延式進(jìn)步黨（達(dá)林頓功率晶體管在1 4） |
| 文件頁(yè)數(shù)： | 5/6頁(yè) |
| 文件大?。?/td> | 145K |
| 代理商： | MP4305 |
MP4305
2002-11-20
5
Ambient temperature Ta (°C)
P
T
– Ta
T
T
Total power dissipation P
T
(W)
T
j
– P
T
J
T
j
Pulse width t
w
(s)
Collector-emitter voltage V
CE
(V)
Safe Operating Area
C
C
0
0
Circuit board
Attached on a circuit board
(1) 1 device operation
(2) 2 devices operation
(3) 3 devices operation
(4) 4 devices operation
40
80
120
160
200
1
2
3
4
5
(4)
(2)
(1)
(3)
r
th
– t
w
T
t
0.001
0.01
0.1
1
10
100
1000
0.3
-No heat sink and attached on a circuit board-
(1) 1 device operation
(2) 2 devices operation
(3) 3 devices operation
(4) 4 devices operation
Circuit board
Curves should be applied in thermal
limited area. (single nonrepetitive pulse)
Below figure show thermal resistance per
1 unit versus pulse width.
(4)
(2)
(1)
1
3
10
30
100
300
(3)
0
0
Attached on a circuit board
(1) 1 device operation
(2) 2 devices operation
(3) 3 devices operation
(4) 4 devices operation
Circuit board
2
4
6
8
10
40
80
120
160
200
(4)
(2)
(1)
(3)
*: Single nonrepetitive pulse
Ta = 25°C
Curves must be derated
linearly with increase in
temperature.
0.01
1
3
10
30
100
300
0.03
0.05
0.1
0.3
0.5
1
3
5
10
20
IC max (pulsed)*
10 ms*
1 ms*
100 μs*
VCEO max
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