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參數(shù)資料
| 型號： | MP4305 |
| 廠商： | Toshiba Corporation |
| 英文描述： | TOSHIBA Power Transistor Module Silicon PNP Epitaxial Type (Darlington power transistor 4 in 1) |
| 中文描述： | 東芝功率晶體管模塊硅外延式進(jìn)步黨（達(dá)林頓功率晶體管在1 4） |
| 文件頁數(shù)： | 4/6頁 |
| 文件大?。?/td> | 145K |
| 代理商： | MP4305 |
MP4305
2002-11-20
4
Collector-emitter voltage V
CE
(V)
I
C
– V
CE
C
C
Base-emitter voltage V
BE
(V)
I
C
– V
BE
C
C
Collector current I
C
(A)
h
FE
– I
C
D
F
Base current I
B
(mA)
V
CE
– I
B
C
C
Collector current I
C
(A)
V
CE (sat)
– I
C
C
V
C
Collector current I
C
(A)
V
BE (sat)
– I
C
B
V
B
0
0
2
4
6
8
0.8
1.6
2.4
3.2
4.0
Common emitter
VCE =
5 V
25
55
Ta = 100°C
0
0
0.5
IB =
0.2 mA
Common emitter
Ta = 25°C
0.3
1.0
1.5
2
4
6
8
2
4
6
8
10
0.7
3
10
200
0.05
25
Ta = 100°C
55
0.1
0.3
1
3
10
20
500
1000
3000
5000
10000
30000
Common emitter
VCE =
5 V
Common emitter
Ta = 25°C
0.4
0.1
5
IC =
8 A
7
6
2
1
0.5
0.1
4
3
1
10
100
1000
0.8
1.2
1.6
2.0
2.4
2.8
0.1
0.3
Common emitter
IC/IB = 500
0.5
1
3
5
10
0.3
1
3
10
25
Ta =
55°C
100
0.3
0.3
Common emitter
IC/IB = 500
0.1
1
3
10
0.5
1
3
5
10
25
Ta =
55°C
100
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