參數(shù)資料
型號: MP4009
廠商: Toshiba Corporation
英文描述: Silicon PNP Triple Diffused Type (Four Darlington Power Transistors in One)
中文描述: 硅進(jìn)步黨三漫射型(四達(dá)林頓功率晶體管在一)
文件頁數(shù): 4/5頁
文件大小: 161K
代理商: MP4009
MP4009
2004-07-01
4
Collector-emitter voltage V
CE
(V)
Safe Operating Area
C
C
r
th
– t
w
Pulse width t
w
(s)
T
t
Ambient temperature Ta (°C)
P
T
– Ta
T
T
Total power dissipation P
T
(W)
T
j
– P
T
J
T
j
0
8
40
2
4
6
80
120
160
200
0
(1) 1-device operation
(2) 2-device operation
(3) 3-device operation
(4) 4-device operation
Attached on a circuit board
Circuit board
(4)
(3)
(2)
(1)
1
2
3
4
0
160
40
80
120
5
0
Attached on a circuit board
(1) 1-device operation
(2) 2-device operation
(3) 3-device operation
(4) 4-device operation
Circuit board
(1)
(2)
(3)
(4)
0.03
1
3
10
30
100
200
0.05
0.1
0.3
0.5
1
3
5
10
30
*: Single nonrepetitive pulse
Ta = 25°C
Curves must be derated linearly
with increase in temperature.
IC max (pulsed)*
10 ms*
1 ms*
100 μs*
VCEO max
0.001
0.01
0.1
1
10
100
1000
0.3
1
3
10
30
100
300
Curves should be applied in thermal
limited area. (Single nonrepetitive pulse)
The figure shows thermal resistance per
device versus pulse width.
-No heat sink/Attached on a circuit board-
(1) 1-device operation
(2) 2-device operation
(3) 3-device operation
(4) 4-device operation
Circuit board
(4)
(3)
(2)
(1)
相關(guān)PDF資料
PDF描述
MP4013 High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching
MP4020 High Power Switching Applications Hammer Drive, Pulse Motor Drive and Inductive Load Switching
MP4101 POWER TRANSISTOR MODULE SILICON NPN EPITAXIAL TYPE
MP4104 High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching
MP4202 POWER MOS FET MODULE SILICON N CHANNEL MOS TYPE
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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