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參數(shù)資料
| 型號： | MP4013 |
| 廠商： | Toshiba Corporation |
| 英文描述： | High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching |
| 中文描述： | 高功率開關應用。錘驅(qū)動器，步進電機驅(qū)動器和感性負載開關 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大小： | 138K |
| 代理商： | MP4013 |
MP4013
2002-11-20
1
TOSHIBA Power Transistor Module Silicon NPN Epitaxial Type (Darlington power transistor 4 in 1)
MP4013
High Power Switching Applications.
Hammer Drive, Pulse Motor Drive and Inductive Load
Switching.
Small package by full molding (SIP 10 pin)
High collector power dissipation (4 devices operation)
: P
T
= 4 W (Ta = 25°C)
High collector current: I
C (DC)
= 2 A (max)
High DC current gain: h
FE
= 2000 (min) (V
CE
= 2 V, I
C
= 1 A)
Zener diode included between collector and base.
Maximum Ratings
(Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
80 ± 10
V
Collector-emitter voltage
80 ± 10
V
Emitter-base voltage
8
V
DC
2
Collector current
Pulse
3
A
Continuous base current
0.5
A
Collector power dissipation
(1 device operation)
P
C
2.0
W
Collector power dissipation
(4 devices operation)
P
T
4.0
W
Junction temperature
T
j
150
°C
Storage temperature range
T
stg
55 to 150
°C
Array Configuration
Industrial Applications
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-25A1A
Weight: 2.1 g (typ.)
3
2
1
R1 R2
5
4
7
9
10
R1
≈
5 k
R2
≈
300
6
8
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