參數資料
型號: MP4009
廠商: Toshiba Corporation
英文描述: Silicon PNP Triple Diffused Type (Four Darlington Power Transistors in One)
中文描述: 硅進步黨三漫射型(四達林頓功率晶體管在一)
文件頁數: 2/5頁
文件大小: 161K
代理商: MP4009
MP4009
2004-07-01
2
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance from junction to
ambient
(4-device operation, Ta = 25°C)
Σ
R
th (j-a)
31.3
°C/W
Maximum lead temperature for
soldering purposes
(3.2 mm from case for 10 s)
T
L
260
°C
Electrical Characteristics
(Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
I
CBO
V
CB
=
100 V, I
E
= 0 A
10
μA
Collector cut-off current
I
CEO
V
CE
=
100 V, I
B
= 0 A
10
μA
Emitter cut-off current
I
EBO
V
EB
=
5 V, I
C
= 0 A
0.3
2.0
mA
Collector-base breakdown voltage
V
(BR) CBO
I
C
=
1 mA, I
E
= 0 A
100
V
Collector-emitter breakdown voltage
V
(BR) CEO
I
C
=
30 mA, I
B
= 0 A
100
V
h
FE (1)
V
CE
=
3 V, I
C
=
0.5 A
1000
DC current gain
h
FE (2)
V
CE
=
3 V, I
C
=
3 A
1000
Collector-emitter
V
CE (sat)
I
C
=
3 A, I
B
=
12 mA
2.0
Saturation voltage
Base-emitter
V
BE (sat)
I
C
=
3 A, I
B
=
12 mA
2.5
V
Transition frequency
f
T
V
CE
=
3 V, I
C
=
0.5 A
3
MHz
Collector output capacitance
C
ob
V
CB
= 50 V, I
E
= 0 A, f = 1MHz
40
pF
Turn-on time
t
on
0.5
Storage time
t
stg
3.0
Switching time
Fall time
t
f
I
B1
= I
B2
= 12 mA, duty cycle
1%
2.0
μs
Marking
I
B
20 μs
V
CC
=
30 V
Output
1
I
B1
I
B2
Input
I
B
MP4009
JAPAN
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
Part No. (or abbreviation code)
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PDF描述
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參數描述
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