參數(shù)資料
型號(hào)： MMUN2134
廠商： 樂山無線電股份有限公司
英文描述： Bias Resistor Transistor
中文描述： 偏置電阻晶體管
文件頁(yè)數(shù)： 2/7頁(yè)
文件大?。?/td> 266K
代理商： MMUN2134
LESHAN RADIO COMPANY, LTD.
MMUN2111RLT1 SERIES
Q1–2/7
DEVICE MARKING AND RESISTOR VALUES
(Continued)
Device
MMUN2116RLT1
(2)
MMUN2130RLT1
(2)
MMUN2131RLT1
(2)
MMUN2132RLT1
(2)
MMUN2133RLT1
(2)
MMUN2134RLT1
(2)
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector-Base Cutoff Current (V
CB
=50V, I
E
= 0)
Collector-Emitter Cutoff Current (V
CE
= 50 V, I
B
= 0)
Emitter-Base Cutoff Current
(V
EB
= 6.0 V, I
C
= 0)
Marking
A6F
A6G
A6H
A6J
A6K
A6L
R1 (K)
4.7
1.0
2.2
4.7
4.7
22
R2 (K)
1.0
2.2
4.7
47
47
Symbol
Min
Typ
Max
Unit
I
CBO
I
CEO
I
EBO
-
-
-
-
-
-
-
-
-
-
-
-
-
50
50
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
100
500
0.5
0.2
0.1
0.2
0.9
1.9
4.3
2.3
1.5
0.18
0.13
-
-
nAdc
nAdc
mAdc
MMUN2111RLT1
MMUN2112RLT1
MMUN2113RLT1
MMUN2114RLT1
MMUN2115RLT1
MMUN2116RLT1
MMUN2130RLT1
MMUN2131RLT1
MMUN2132RLT1
MMUN2133RLT1
MMUN2134RLT1
Collector-Base Breakdown Voltage (I
C
= 10
μ
A, I
E
= 0)
Collector-Emitter Breakdown Voltage
(3)
(I
C
=2.0mA, I
B
=0)
V
(BR)CBO
V
(BR)CEO
Vdc
Vdc
ON CHARACTERISTICS
(3)
DC Current Gain
(V
CE
= 10 V, I
C
= 5.0 mA)
MMUN2111RLT1
MMUN2112RLT1
MMUN2113RLT1
MMUN2114RLT1
MMUN2115RLT1
MMUN2116RLT1
MMUN2130RLT1
MMUN2131RLT1
MMUN2132RLT1
MMUN2133RLT1
MMUN2134RLT1
h
FE
35
60
80
80
160
160
3.0
8.0
15
80
80
-
60
100
140
140
250
250
5.0
15
27
140
130
-
-
-
-
-
-
-
-
-
-
-
-
Collector-Emitter Saturation Voltage (I
C
=10mA, I
E
=0.3mA)
(I
C
= 10 mA, I
B
= 5 mA) MMUN2130RLT1
(I
C
= 10 mA, I
B
= 1 mA) MMUN2115RLT1
MMUN2132RLT1
MMUN2133RLT1
Output Voltage (on)
(V
CC
=5.0V,V
B
=2.5V, R
L
=1.0k
)
V
CE(sat)
0.25
Vdc
MMUN2131RLT1
MMUN2116RLT1
MMUN2134RLT1
V
OL
-
-
-
-
-
-
-
-
-
-
-
Vdc
MMUN2111RLT1
MMUN2112RLT1
MMUN2114RLT1
MMUN2115RLT1
MMUN2116RLT1
MMUN2130RLT1
MMUN2131RLT1
MMUN2132RLT1
MMUN2133RLT1
MMUN2134RLT1
MMUN2113RLT1
-
-
-
-
-
-
-
-
-
-
-
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
(V
CC
=5.0V,V
B
=3.5V, R
L
= 1.0k
)
2. New devices. Updated curves to follow in subsequent data sheets.
3. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%
2-446 LRC Small-Signal Transistors, FETs and Diodes Device Data
8
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MMUN2134L 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Digital Transistors (BRT) R1 = 22 k, R2 = 47 k
MMUN2134LT1 功能描述:開關(guān)晶體管 - 偏壓電阻器 100mA 50V BRT PNP RoHS:否 制造商:ON Semiconductor 配置: 晶體管極性:NPN/PNP 典型輸入電阻器: 典型電阻器比率: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 直流集電極/Base Gain hfe Min:200 mA 最大工作頻率: 集電極—發(fā)射極最大電壓 VCEO:50 V 集電極連續(xù)電流:150 mA 峰值直流集電極電流: 功率耗散:200 mW 最大工作溫度: 封裝:Reel
MMUN2134LT1G 功能描述:開關(guān)晶體管 - 偏壓電阻器 100mA 50V BRT PNP RoHS:否 制造商:ON Semiconductor 配置: 晶體管極性:NPN/PNP 典型輸入電阻器: 典型電阻器比率: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 直流集電極/Base Gain hfe Min:200 mA 最大工作頻率: 集電極—發(fā)射極最大電壓 VCEO:50 V 集電極連續(xù)電流:150 mA 峰值直流集電極電流: 功率耗散:200 mW 最大工作溫度: 封裝:Reel
MMUN2134LT1G 制造商:ON Semiconductor 功能描述:TRANSISTOR PRE-BIASED PNP 50V 22/47K
MMUN2134LT3 制造商:LRC 制造商全稱:Leshan Radio Company 功能描述:Bias Resistor Transistors
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