參數(shù)資料
型號(hào)： MMT08B064T3
廠商： ON SEMICONDUCTOR
元件分類： 浪涌電流限制器
英文描述： Thyristor Surge Protectors High Voltage Bidirectional TSPD(高壓，雙向，TSPD，閘流管浪涌保護(hù)器)
中文描述： 77 V, 32 A, SILICON SURGE PROTECTOR, DO-214AA
封裝： CASE 403C, SMT, SMB, 2 PIN
文件頁(yè)數(shù)： 2/5頁(yè)
文件大?。?/td> 56K
代理商： MMT08B064T3
MMT08B064T3
http://onsemi.com
2
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Operating Temperature Range Blocking or Conducting State
T
J1
40 to +125
°
C
Overload Junction Temperature Maximum Conducting State Only
T
J2
+175
°
C
Maximum Lead Temperature for Soldering Purposes 1/8
″
from Case for 10 Seconds
T
L
260
°
C
ELECTRICAL CHARACTERISTICS
(T
J
= 25
°
C unless otherwise noted) Devices are bidirectional. All electrical parameters apply to
forward and reverse polarities.
Characteristics
Symbol
Min
Typ
Max
Unit
Breakover Voltage (Both polarities)
(dv/dt = 100 V/ s, I
SC
= 1.0 A, Vdc = 1000 V)
(+65
°
C)
V
(BO)
77
80
V
Breakover Voltage (Both polarities)
(f = 60 Hz, I
SC
= 1.0 A(rms), V
OC
= 1000 V(rms),
R
I
= 1.0 k , t = 0.5 cycle) (Note 3)
(+65
°
C)
V
(BO)
77
80
V
Breakover Voltage Temperature Coefficient
dV
(BO)
/dT
J
0.054
V/
°
C
Breakdown Voltage (I
(BR)
= 1.0 mA) Both polarities
V
(BR)
58
V
Off State Current (V
D1
= 50 V) Both polarities
Off State Current
(V
D2
= V
DM
) Both polarities
I
D1
I
D2
2.0
5.0
A
OnState Voltage (I
= 1.0 A)
(PW
≤
300 s, Duty Cycle
≤
2%) (Note 3)
V
T
3.0
V
Breakover Current (f = 60 Hz, V
DM
= 1000 V(rms), R
S
= 1.0 k )
Both polarities
I
BO
91
mA
Holding Current (Both polarities) (Note 3)
V
S
= 500 V; I
T
(Initiating Current) =
1.0 A (+65
°
C)
I
H
150
130
mA
Critical Rate of Rise of OffState Voltage
(Linear waveform, V
D
= Rated V
BR
, T
J
= 25
°
C)
dv/dt
2000
V/ s
Capacitance (f = 1.0 MHz, 50 Vdc, 1.0 V rms Signal)
Capacitance
(f = 1.0 MHz, 2.0 Vdc, 1.0 V rms Signal)
3. Measured under pulse conditions to reduce heating.
C
O
67
130
pF
Voltage Current Characteristic of TSPD
(Bidirectional Device)
Symbol
Parameter
I
D1
, I
D2
Off State Leakage Current
V
D1
, V
D2
Off State Blocking Voltage
V
BR
Breakdown Voltage
V
BO
Breakover Voltage
I
BO
Breakover Current
I
H
Holding Current
V
TM
On State Voltage
+ Current
+ Voltage
V
TM
V
(BO)
I
(BO)
I
D2
I
D1
V
D1
V
D2
V
(BR)
I
H
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MMT08B064T3G 功能描述:硅對(duì)稱二端開關(guān)元件 80A Surge 64V RoHS:否 制造商:Bourns 轉(zhuǎn)折電流 VBO:40 V 最大轉(zhuǎn)折電流 IBO:800 mA 不重復(fù)通態(tài)電流: 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:25 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）: 保持電流（Ih 最大值）:50 mA 開啟狀態(tài)電壓:5 V 關(guān)閉狀態(tài)電容 CO:120 pF 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-214AA
MMT08B260T3 功能描述:硅對(duì)稱二端開關(guān)元件 80A Surge 260V RoHS:否 制造商:Bourns 轉(zhuǎn)折電流 VBO:40 V 最大轉(zhuǎn)折電流 IBO:800 mA 不重復(fù)通態(tài)電流: 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:25 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）: 保持電流（Ih 最大值）:50 mA 開啟狀態(tài)電壓:5 V 關(guān)閉狀態(tài)電容 CO:120 pF 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-214AA
MMT08B260T3G 功能描述:硅對(duì)稱二端開關(guān)元件 80A Surge 260V RoHS:否 制造商:Bourns 轉(zhuǎn)折電流 VBO:40 V 最大轉(zhuǎn)折電流 IBO:800 mA 不重復(fù)通態(tài)電流: 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:25 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）: 保持電流（Ih 最大值）:50 mA 開啟狀態(tài)電壓:5 V 關(guān)閉狀態(tài)電容 CO:120 pF 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-214AA
MMT08B310T3 功能描述:硅對(duì)稱二端開關(guān)元件 80A Surge 310V RoHS:否 制造商:Bourns 轉(zhuǎn)折電流 VBO:40 V 最大轉(zhuǎn)折電流 IBO:800 mA 不重復(fù)通態(tài)電流: 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:25 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）: 保持電流（Ih 最大值）:50 mA 開啟狀態(tài)電壓:5 V 關(guān)閉狀態(tài)電容 CO:120 pF 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-214AA
MMT08B310T3_05 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Thyristor Surge Protectors High Voltage Bidirectional TSPD
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