- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄385630 > MMT08B310T3 (ON SEMICONDUCTOR) Thyristor Surge Protectors(晶闡管浪涌電壓保護(hù)器) PDF資料下載
參數(shù)資料
| 型號(hào)： | MMT08B310T3 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類(lèi)： | 浪涌電流限制器 |
| 英文描述： | Thyristor Surge Protectors(晶闡管浪涌電壓保護(hù)器) |
| 中文描述： | 365 V, SILICON SURGE PROTECTOR, DO-214AA |
| 封裝： | CASE 403C-01, SMT, SMB, 2 PIN |
| 文件頁(yè)數(shù)： | 1/6頁(yè) |
| 文件大?。?/td> | 58K |
| 代理商： | MMT08B310T3 |
Semiconductor Components Industries, LLC, 2005
August, 2005 Rev. 3
1
Publication Order Number:
MMT08B310T3/D
MMT08B310T3
Preferred Devices
Thyristor Surge Protectors
High Voltage Bidirectional TSPD
These Thyristor Surge Protective devices (TSPD) prevent
overvoltage damage to sensitive circuits by lightning, induction and
power line crossings. They are breakovertriggered crowbar
protectors. Turnoff occurs when the surge current falls below the
holding current value.
High Surge Current Capability: 80 Amps 10 x 1000
μ
sec, for
Controlled Temperature Environments
The MMT08B310 is used to help equipment meet various regulatory
requirements including: Bellcore 1089, ITU K.20 & K.21, IEC 950,
UL 1459 & 1950 and FCC Part 68.
Bidirectional Protection in a Single Device
Little Change of Voltage Limit with Transient Amplitude or Rate
Freedom from Wearout Mechanisms Present in NonSemiconductor
Devices
FailSafe, Shorts When Overstressed, Preventing Continued
Unprotected Operation
Surface Mount Technology (SMT)
Indicates UL Registered File #E210057
PbFree Package is Available
MAXIMUM RATINGS
(T
J
= 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
OffState Voltage Maximum
MMT08B310T3
V
DM
270
V
Maximum Pulse Surge Short Circuit
Current NonRepetitive
Double Exponential Decay Waveform
(Notes 1 and 2)
10 x 1000
μ
sec
(25
°
C Initial Temperature)
8 x 20
μ
sec
10 x 160
μ
sec
10 x 560
μ
sec
I
PPS1
I
PPS2
I
PPS3
I
PPS4
80
250
150
100
A(pk)
Maximum NonRepetitive Rate of
Change of OnState Current
Double Exponential Waveform,
R = 1.0, L = 1.5
μ
H, C = 1.67
μ
F,
I
pk
= 110A
di/dt
150
A/
μ
s
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Allow cooling before testing second polarity.
2. Measured under pulse conditions to reduce heating.
BIDIRECTIONAL TSPD
80 AMP SURGE
310 VOLTS
Preferred
devices are recommended choices for future use
and best overall value.
Device
Package
Shipping
ORDERING INFORMATION
MMT08B310T3
SMB
2500 Tape & Reel
MT1
MT2
SMB
(No Polarity)
(Essentially JEDEC DO214AA)
CASE 403C
(
)
RPCJ
A
Y
WW
= Specific Device Code
= Assembly Location
= Year
= Work Week
= PbFree Package
(Note: Microdot may be in either location)
MARKING DIAGRAM
AYWW
RPCJ
http://onsemi.com
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
MMT08B310T3G
SMB
PbFree
2500 Tape & Reel
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MMUN2238LT1 | Bias Resistor Transistor |
| MMUN2241LT1 | Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network(NPN型偏置電阻晶體管) |
| MMUN2212LT1 | Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network(NPN型偏置電阻晶體管) |
| MMUN2211LT1 | Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network(NPN型偏置電阻晶體管) |
| MMUN2213LT1 | Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network(NPN型偏置電阻晶體管) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MMT08B310T3_05 | 制造商:ONSEMI 制造商全稱(chēng):ON Semiconductor 功能描述:Thyristor Surge Protectors High Voltage Bidirectional TSPD |
| MMT08B310T3G | 功能描述:硅對(duì)稱(chēng)二端開(kāi)關(guān)元件 80A Surge 310V RoHS:否 制造商:Bourns 轉(zhuǎn)折電流 VBO:40 V 最大轉(zhuǎn)折電流 IBO:800 mA 不重復(fù)通態(tài)電流: 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:25 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）: 保持電流（Ih 最大值）:50 mA 開(kāi)啟狀態(tài)電壓:5 V 關(guān)閉狀態(tài)電容 CO:120 pF 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-214AA |
| MMT08B350T3 | 功能描述:硅對(duì)稱(chēng)二端開(kāi)關(guān)元件 80A Surge 350V RoHS:否 制造商:Bourns 轉(zhuǎn)折電流 VBO:40 V 最大轉(zhuǎn)折電流 IBO:800 mA 不重復(fù)通態(tài)電流: 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:25 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）: 保持電流（Ih 最大值）:50 mA 開(kāi)啟狀態(tài)電壓:5 V 關(guān)閉狀態(tài)電容 CO:120 pF 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-214AA |
| MMT08B350T3G | 功能描述:硅對(duì)稱(chēng)二端開(kāi)關(guān)元件 80A Surge 350V RoHS:否 制造商:Bourns 轉(zhuǎn)折電流 VBO:40 V 最大轉(zhuǎn)折電流 IBO:800 mA 不重復(fù)通態(tài)電流: 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:25 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）: 保持電流（Ih 最大值）:50 mA 開(kāi)啟狀態(tài)電壓:5 V 關(guān)閉狀態(tài)電容 CO:120 pF 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-214AA |
| MMT100J224 | 制造商:Nissei Electronics 功能描述: |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。