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參數(shù)資料
| 型號： | MMSF3P03HDR2 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 4.6 A, 30 V, 0.1 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | SO-8 |
| 文件頁數(shù)： | 6/12頁 |
| 文件大?。?/td> | 268K |
| 代理商： | MMSF3P03HDR2 |
MMSF3P03HD
http://onsemi.com
3
TYPICAL ELECTRICAL CHARACTERISTICS
R
DS(on)
,DRAINT
OSOURCE
RESIST
ANCE
(NORMALIZED)
R
DS(on)
,DRAINT
OSOURCE
RESIST
ANCE
(OHMS)
0
3
4
6
1
5
2
0
0.4
0.8
2
0
3
4
6
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
Figure 1. OnRegion Characteristics
I D
,DRAIN
CURRENT
(AMPS)
2
2.2
2.4
2.6
2.8
3.2
I D
,DRAIN
CURRENT
(AMPS)
VGS, GATETOSOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
02
4
10
R
DS(on)
,DRAINT
OSOURCE
RESIST
ANCE
(OHMS)
0
1
234
6
0.07
0.085
0.095
VGS, GATETOSOURCE VOLTAGE (VOLTS)
Figure 3. OnResistance versus
GateToSource Voltage
ID, DRAIN CURRENT (AMPS)
Figure 4. OnResistance versus Drain Current
and Gate Voltage
0
2.0
2.5
3.0
1
100
1000
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. OnResistance Variation with
Temperature
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
Figure 6. DrainToSource Leakage
Current versus Voltage
I DSS
,LEAKAGE
(nA)
TJ = 25°C
VDS ≥ 10 V
TJ = 100°C
25
°C
55
°C
TJ = 25°C
VGS = 0 V
VGS = 10 V
ID = 1.5 A
VGS = 4.5 V
ID = 1.5 A
1.2
4.5 V
3.8 V
3.1 V
2.4 V
1
1.6
3
68
10 V
50
25
0
25
50
75
100
125 150
TJ = 125°C
5
0.09
0.08
0.5
2
5
1.0
1.5
0
5
10
15
20
25
30
2.7 V
0.6
0.5
0.4
0.3
0.2
0.1
0
0.075
10
100
°C
2.9 V
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