- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄98026 > MMSF3P03HDR2 (ON SEMICONDUCTOR) 4.6 A, 30 V, 0.1 ohm, P-CHANNEL, Si, POWER, MOSFET PDF資料下載
參數(shù)資料
| 型號(hào)： | MMSF3P03HDR2 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 4.6 A, 30 V, 0.1 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | SO-8 |
| 文件頁(yè)數(shù)： | 5/12頁(yè) |
| 文件大小： | 268K |
| 代理商： | MMSF3P03HDR2 |
MMSF3P03HD
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) (Note 1.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
DrainSource Breakdown Voltage
(VGS = 0 Vdc, ID = 250 Adc)
Temperature Coefficient (Positive)
V(BR)DSS
30
30
Vdc
mV/
°C
Zero Gate Voltage Drain Current
(VDS = 30 Vdc, VGS = 0 Vdc)
(VDS = 30 Vdc, VGS = 0 Vdc, TJ = 125°C)
IDSS
1.0
10
Adc
GateBody Leakage Current (VGS = ± 20 Vdc, VDS = 0)
IGSS
5.0
100
nAdc
ON CHARACTERISTICS (Note 3.)
Gate Threshold Voltage
(VDS = VGS, ID = 250 Adc)
Temperature Coefficient (Negative)
VGS(th)
1.0
1.5
3.9
2.0
Vdc
mV/
°C
Static DraintoSource OnResistance
(VGS = 10 Vdc, ID = 3.0 Adc)
(VGS = 4.5 Vdc, ID = 1.5 Adc)
RDS(on)
0.080
0.090
0.100
0.110
Ohm
Forward Transconductance (VDS = 3.0 Vdc, ID = 1.5 Adc)
gFS
3.0
5.0
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
24 Vd
V
0Vd
Ciss
1015
1420
pF
Output Capacitance
(VDS = 24 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Coss
470
660
Transfer Capacitance
f = 1.0 MHz)
Crss
135
190
SWITCHING CHARACTERISTICS (Note 4.)
TurnOn Delay Time
td(on)
26
52
ns
Rise Time
(VDS = 15 Vdc, ID = 3.0 Adc,
VGS =45Vdc
tr
102
204
TurnOff Delay Time
VGS = 4.5 Vdc,
RG = 6.0 )
td(off)
67
134
Fall Time
RG
6.0
)
tf
69
138
TurnOn Delay Time
td(on)
14
28
Rise Time
(VDS = 15 Vdc, ID = 3.0 Adc,
VGS =10Vdc
tr
32
64
TurnOff Delay Time
VGS = 10 Vdc,
RG = 6.0 )
td(off)
104
208
Fall Time
RG
6.0
)
tf
66
132
Gate Charge
QT
32.4
45
nC
(VDS = 24 Vdc, ID = 3.0 Adc,
Q1
2.7
(VDS
24 Vdc, ID
3.0 Adc,
VGS = 10 Vdc)
Q2
9.0
Q3
6.9
SOURCEDRAIN DIODE CHARACTERISTICS
Forward OnVoltage (Note 1.)
(IS = 3.0 Adc, VGS = 0 Vdc)
(IS = 3.0 Adc, VGS = 0 Vdc,
TJ = 125°C)
VSD
1.3
0.85
2.0
Vdc
Reverse Recovery Time
trr
31
ns
(IS = 3.0 Adc,
ta
22
(IS
3.0 Adc,
dIS/dt = 100 A/s)
tb
9.0
Reverse Recovery Stored Charge
QRR
0.034
C
1. Negative sign for PChannel device omitted for clarity.
3. Pulse Test: Pulse Width
≤ 300 s, Duty Cycle ≤ 2%.
4. Switching characteristics are independent of operating junction temperature.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MMSF4205R2 | 8.8 A, 20 V, 0.014 ohm, P-CHANNEL, Si, POWER, MOSFET |
| MMSF4205R2 | 8.8 A, 20 V, 0.014 ohm, P-CHANNEL, Si, POWER, MOSFET |
| MMSF4N01HDR2 | 5800 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| MMSF4P01HDR2 | 5.1 A, 12 V, 0.08 ohm, P-CHANNEL, Si, POWER, MOSFET |
| MMSF5P02HDR2 | 8700 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MMSF4205R2 | 制造商:ON Semiconductor 功能描述:Trans MOSFET P-CH 20V 10A 8-Pin SOIC T/R |
| MMSF4N01HD | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:TMOS MOSFET 5.8 AMPERES 20 VOLTS |
| MMSF4N01HDR2 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:ON Semiconductor 功能描述: |
| MMSF4P01HD | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:SINGLE TMOS POWER FET 4.0 AMPERES 12 VOLTS |
| MMSF5N02HD | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:SINGLE TMOS POWER MOSFET 5.0 AMPERES 20 VOLTS |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。