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參數(shù)資料
| 型號： | MMSF3P03HDR2 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 4.6 A, 30 V, 0.1 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | SO-8 |
| 文件頁數(shù)： | 10/12頁 |
| 文件大?。?/td> | 268K |
| 代理商： | MMSF3P03HDR2 |
MMSF3P03HD
http://onsemi.com
7
TJ, STARTING JUNCTION TEMPERATURE (°C)
E AS
,SINGLE
PULSE
DRAINT
OSOURCE
Figure 12. Maximum Rated Forward Biased
Safe Operating Area
Figure 13. Maximum Avalanche Energy versus
Starting Junction Temperature
A
V
ALANCHE
ENERGY
(mJ)
0
25
50
75
100
125
400
ID = 9 A
150
600
500
300
200
100
0.1
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
1
10
I D
,DRAIN
CURRENT
(AMPS)
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.01
VGS = 20 V
SINGLE PULSE
TC = 25°C
10
0.1
dc
10 ms
1
100
Mounted on 2
″ sq. FR4 board (1″ sq. 2 oz. Cu 0.06″
thick single sided), 10s max.
1 ms
100
s
10
s
TYPICAL ELECTRICAL CHARACTERISTICS
Figure 14. Thermal Response
Figure 15. Diode Reverse Recovery Waveform
di/dt
trr
ta
tp
IS
0.25 IS
TIME
IS
tb
t, TIME (s)
Rthja(t)
,EFFECTIVE
TRANSIENT
THERMAL
RESIST
ANCE
1
0.1
0.01
D = 0.5
SINGLE PULSE
1.0E05
1.0E04
1.0E03
1.0E02
1.0E01
1.0E+00
1.0E+01
0.2
0.1
0.05
0.02
0.01
1.0E+02
1.0E+03
0.001
10
0.0163
0.0652
0.1988
0.6411
0.9502
72.416 F
1.9437 F
0.5541 F
0.1668 F
0.0307 F
Chip
Ambient
Normalized to θja at 10s.
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