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參數(shù)資料
| 型號(hào)： | MMSF3305 |
| 廠商： | Motorola, Inc. |
| 英文描述： | SINGLE TMOS POWER MOSFET 9.1 AMPERES 30 VOLTS |
| 中文描述： | 功率MOSFET單任務(wù)操作系統(tǒng)9.1安培30伏 |
| 文件頁(yè)數(shù)： | 3/4頁(yè) |
| 文件大?。?/td> | 80K |
| 代理商： | MMSF3305 |
3
Motorola TMOS Power MOSFET Transistor Device Data
ELECTRICAL CHARACTERISTICS
(TC = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 0.25 mAdc)
Temperature Coefficient (Positive)
(1) (3)
V(BR)DSS
30
—
—
—
—
—
Vdc
mV/
°
C
Zero Gate Voltage Drain Current
(VDS = 30 Vdc, VGS = 0 Vdc)
(VDS = 15 Vdc, VGS = 0 Vdc, TJ = 70
°
C)
Gate–Body Leakage Current (VGS =
±
20 Vdc, VDS = 0)
ON CHARACTERISTICS(1)
IDSS
—
—
—
—
1.0
5.0
μ
Adc
IGSS
—
—
100
nAdc
Gate Threshold Voltage
(VDS = VGS, ID = 0.25 mAdc)
Threshold Temperature Coefficient (Negative)
(1) (3)
VGS(th)
0.7
—
—
—
1.4
—
Vdc
mV/
°
C
Static Drain–to–Source On–Resistance
(VGS = 10 Vdc, ID = 9.1 Adc)
(VGS = 4.5 Vdc, ID = 7.3 Adc)
(1) (3)
RDS(on)
—
—
—
—
20
30
m
On–State Drain Current
(VDS
≤
5.0 V, VGS = 10 V)
(VDS
≤
5.0 V, VGS = 4.5 V)
ID(on)
40
10
—
—
—
—
A
Forward Transconductance (VDS = 15 Vdc, ID = 8.0 Adc)
(1)
gFS
—
—
—
Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 30 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
30 Vdc V
Ciss
Coss
Crss
—
—
TBD
pF
Output Capacitance
—
—
TBD
Transfer Capacitance
—
—
TBD
SWITCHING CHARACTERISTICS(2)
Turn–On Delay Time
(VDD = 15 Vdc, ID = 1.0 Adc,
VGS= 10 Vdc
VGS = 10 Vdc,
RG = 6.0
) (1)
1 0 Ad
td(on)
tr
td(off)
tf
QT
—
—
TBD
ns
Rise Time
—
—
TBD
Turn–Off Delay Time
—
—
TBD
Fall Time
) ( )
—
—
TBD
Gate Charge
See Figure 8
(VDS = 15 Vdc,D
(DS
VGS = 10 Vdc) (1)
4 6 Ad
—
—
TBD
nC
Q1
Q2
Q3
—
—
—
,
—
—
—
—
—
—
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage(1)
(IS = 2.1 Adc, VGS = 0 Vdc) (1)
(IS = 2.1 Adc, VGS = 0 Vdc, TJ = 125
°
C)
VSD
—
—
—
—
1.2
—
Vdc
Reverse Recovery Time
See Figure 15
(IS = 2.1 Adc, VGS
(S
dIS/dt = 100 A/
μ
s) (1)
2 1 Ad
trr
ta
tb
—
—
TBD
ns
—
—
—
,
—
—
—
Reverse Recovery Stored Charge
QRR
—
—
—
μ
C
(1) Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2%.
(2) Switching characteristics are independent of operating junction temperature.
(3) Reflects typical values. Cpk =
3 x SIGMA
(4) Repetitive rating; pulse width limited by maximum junction temperature.
Max limit – Typ
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