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參數(shù)資料
| 型號： | MMSF7PO3HD |
| 廠商： | Motorola, Inc. |
| 英文描述： | TMOS SINGLE P-CHANNEL FIELD EFFECT TRANSISTORS |
| 中文描述： | TMOS是單P溝道場效應(yīng)晶體管 |
| 文件頁數(shù)： | 1/10頁 |
| 文件大?。?/td> | 228K |
| 代理商： | MMSF7PO3HD |
1
Motorola TMOS Power MOSFET Transistor Device Data
Medium Power Surface Mount Products
Single HDTMOS are an advanced series of power MOSFETs
which utilize Motorola’s High Cell Density TMOS process.
HDTMOS devices are designed for use in low voltage, high speed
switching applications where power efficiency is important. Typical
applications are dc–dc converters, and power management in
portable and battery powered products such as computers,
printers, cellular and cordless phones. They can also be used for
low voltage motor controls in mass storage products such as disk
drives and tape drives.
Low RDS(on) Provides Higher Efficiency and Extends Battery Life
Logic Level Gate Drive — Can Be Driven by Logic ICs
Miniature SO–8 Surface Mount Package — Saves Board Space
Diode Is Characterized for Use In Bridge Circuits
Diode Exhibits High Speed, With Soft Recovery
IDSS Specified at Elevated Temperature
Mounting Information for SO–8 Package Provided
MAXIMUM RATINGS
(TJ = 25
°
C unless otherwise noted)
Rating
Symbol
VDSS
VGS
ID
IDM
IS
PD
TJ, Tstg
EAS
Value
30
±
20
7.0
50
Unit
Vdc
Vdc
Adc
Apk
Drain–to–Source Voltage
Gate–to–Source Voltage — Continuous
Drain Current — Continuous @ TA = 25
°
C
Drain Current
— Single Pulse (tp
≤
10
μ
s)
Source Current — Continuous @ TA = 25
°
C
Total Power Dissipation @ TA = 25
°
C (1)
Operating and Storage Temperature Range
Single Pulse Drain–to–Source Avalanche Energy – STARTING TJ = 25
°
C
(VDD = 30 Vdc, VGS = 5.0 Vdc, VDS = 32 Vdc, IL = 10 Apk, L = 10 mH, RG = 25 )
Thermal Resistance — Junction–to–Ambient
Maximum Temperature for Soldering
DEVICE MARKING
S7P03
(1) When mounted on 1 inch square FR–4 or G–10 (VGS = 10 V @ 10 seconds)
ORDERING INFORMATION
2.3
2.5
Adc
Watts
°
C
mJ
– 55 to 150
5000
R
θ
JA
T
50
260
°
C/W
°
C
Device
Reel Size
13
″
Tape Width
Quantity
MMSF7P03HDR2
12 mm embossed tape
2500 units
Designer’s Data for “Worst Case” Conditions
— The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Preferred devices
are Motorola recommended choices for future use and best overall value.
Designer’s and HDTMOS are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Thermal Clad is a trademark of the Bergquist Company.
Order this document
by MMSF7P03HD/D
SEMICONDUCTOR TECHNICAL DATA
Source
Source
Source
Gate
CASE 751–05, Style 13
SO–8
1
2
3
4
8
7
6
5
Top View
Drain
Drain
Drain
Drain
D
S
G
SINGLE TMOS
POWER MOSFET
30 VOLTS
RDS(on) = 35 m
Motorola Preferred Device
REV 2
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