參數(shù)資料
型號: MMSF2P02E
廠商: Motorola, Inc.
英文描述: SINGLE TMOS POWER MOSFET 2.5 AMPERES 20 VOLTS
中文描述: 功率MOSFET單任務(wù)操作系統(tǒng)2.5安培20伏特
文件頁數(shù): 3/8頁
文件大?。?/td> 266K
代理商: MMSF2P02E
3
Motorola TMOS Power MOSFET Transistor Device Data
TYPICAL ELECTRICAL CHARACTERISTICS
3.5 V
3.3 V
10 V
R
R
R
0
0
0.4
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
0.8
1.2
1.6
2
0
2
3
Figure 1. On–Region Characteristics
ID
ID
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
3
4
5
10
0.3
0.4
0.6
0.1
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 3. On–Resistance versus
Gate–to–Source Voltage
ID, DRAIN CURRENT (AMPS)
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
1
TJ, JUNCTION TEMPERATURE (
°
C)
Figure 5. On–Resistance Variation with
Temperature
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 6. Drain–to–Source Leakage Current
versus Voltage
0.2
6
8
–50
0
50
100
150
4
1
0
TJ = 25
°
C
VGS = 10
2
3
4
1
2.5
3
3.5
4
4.5
0.1
0.4
0.5
0.6
0.3
0.2
0
0.5
1
1.5
2
0
I
100
10
0
4
8
12
20
0.5
1.0
1.5
2.0
VGS = 10 V
ID = 2 A
125
75
25
–25
VDS
10 V
25
°
C
100
°
C
TJ = –55
°
C
VGS = 4.5
TJ = 25
°
C
9
7
0.5
ID = 1 A
TJ = 25
°
C
16
3.7 V
3.9 V
4.1 V
4.3 V
4.5 V
5 V
4.7 V
7 V
VGS = 0 V
TJ = 125
°
C
100
°
C
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