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參數(shù)資料
| 型號： | MMSF10N03Z |
| 廠商： | MOTOROLA INC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | SINGLE TMOS POWER MOSFET 10 AMPERES 30 VOLTS |
| 中文描述： | 10000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | MINIATURE, CASE 751-05, SO-8 |
| 文件頁數(shù)： | 3/10頁 |
| 文件大?。?/td> | 196K |
| 代理商： | MMSF10N03Z |
3
Motorola TMOS Power MOSFET Transistor Device Data
TYPICAL ELECTRICAL CHARACTERISTICS
R
(
R
0
8.0
16
20
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 1. On–Region Characteristics
ID
0
0.5
1.0
0
10
15
20
ID
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
0
2.0
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
4.0
10
0
0.04
0.06
0
5.0
10
15
20
0.020
Figure 3. On–Resistance versus
Drain Current
ID, DRAIN CURRENT (AMPS)
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
1.5
2.0
0
4.0
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
20
1.0
100
10,000
TJ, JUNCTION TEMPERATURE (
°
C)
Figure 5. On–Resistance Variation with
Temperature
Figure 6. Drain–To–Source Leakage
Current versus Voltage
I
VDS
≥
10 V
TJ = 100
°
C
25
°
C
–55
°
C
TJ = 25
°
C
VGS = 0 V
VGS = 10 V
1.5
2.0
2.5
6.0
8.0
4.5 V
–50
–25
0
25
50
75
100
125
150
TJ = 125
°
C
1.0
10
8.0
25
°
C
100
°
C
R
0
0.5
1.0
1.5
2.0
4.0
10 V
4.5 V
VGS = 2.7 V
3.1 V
TJ = 25
°
C
12
5.0
0.03
0.01
0.05
0.005
0.010
0.015
0
0.5
0
0.01
12
1000
16
VGS = 10 V
ID = 5.0 A
ID = 10 A
TJ = 25
°
C
0.02
1.9 V
2.5 V
2.3 V
2.1 V
3.0
0.1
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